Please note that Cypress is an Infineon Technologies Company. The document following this cover page is marked as Cypress document as this is the company that originally developed the product. Please note that Infineon will continue to offer the product to new and existing customers as part of the Infineon product portfolio. Continuity of document content The fact that Infineon offers the following product as part of the Infineon product portfolio does not lead to any changes to this document. Future revisions will occur when appropriate, and any changes will be set out on the document history page. Continuity of ordering part numbers Infineon continues to support existing part numbers. Please continue to use the ordering part numbers listed in the datasheet for ordering. www.infineon.comFM1808B 256-Kbit (32 K 8) Bytewide F-RAM Memory FM1808B, 256-Kbit (32 K 8) Bytewide F-RAM Memory Voltage operation: V = 4.5 V to 5.5 V Features DD Industrial temperature: 40 C to +85 C 256-Kbit ferroelectric random access memory (F-RAM) logically organized as 32 K 8 28-pin small outline integrated circuit (SOIC) package 14 High-endurance 100 trillion (10 ) read/writes Restriction of hazardous substances (RoHS) compliant 151-year data retention (see the Data Retention and Endurance table) Functional Description NoDelay writes The FM1808B is a 32 K 8 nonvolatile memory that reads and Advanced high-reliability ferroelectric process writes similar to a standard SRAM. A ferroelectric random access memory or F-RAM is nonvolatile, which means that data SRAM and EEPROM compatible is retained after power is removed. It provides data retention for Industry-standard 32 K 8 SRAM and EEPROM pinout over 151 years while eliminating the reliability concerns, 70-ns access time, 130-ns cycle time functional disadvantages, and system design complexities of battery-backed SRAM (BBSRAM). Fast write timing and high Superior to battery-backed SRAM modules write endurance make the F-RAM superior to other types of No battery concerns memory. Monolithic reliability The FM1808B operation is similar to that of other RAM devices True surface mount solution, no rework steps and therefore, it can be used as a drop-in replacement for a standard SRAM in a system. Minimum read and write cycle times Superior for moisture, shock, and vibration are equal. The F-RAM memory is nonvolatile due to its unique Resistant to negative voltage undershoots ferroelectric memory process. These features make the FM1808B ideal for nonvolatile memory applications requiring Low power consumption frequent or rapid writes. Active current 15 mA (max) The device is available in a 28-pin SOIC surface mount package. Standby current 25 A (typ) Device specifications are guaranteed over the industrial temper- ature range 40 C to +85 C. For a complete list of related documentation, click here. Logic Block Diagram A 14-0 A 14-0 32 K x 8 F-RAM Array CE Control DQ WE Logic 7-0 I/O Latch & Bus Driver OE Cypress Semiconductor Corporation 198 Champion Court San Jose, CA 95134-1709 408-943-2600 Document Number: 001-86209 Rev. *F Revised June 10, 2019 Address Latch and Decoder