X-On Electronics has gained recognition as a prominent supplier of FM18W08-PG F-RAM across the USA, India, Europe, Australia, and various other global locations. FM18W08-PG F-RAM are a product manufactured by Infineon. We provide cost-effective solutions for F-RAM, ensuring timely deliveries around the world.

FM18W08-PG Infineon

FM18W08-PG electronic component of Infineon
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See Product Specifications
Part No. FM18W08-PG
Manufacturer: Infineon
Category: F-RAM
Description: F-RAM 256Kb 70ns 32K x 8 Parallel FRAM
Datasheet: FM18W08-PG Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
280: USD 20.9474 ea
Line Total: USD 5865.27 
Availability - 0
MOQ: 280  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Fri. 21 Mar to Thu. 27 Mar
MOQ : 280
Multiples : 1
280 : USD 20.9474

   
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We are delighted to provide the FM18W08-PG from our F-RAM category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the FM18W08-PG and other electronic components in the F-RAM category and beyond.

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FM18W08 256-Kbit (32 K 8) Wide Voltage Bytewide F-RAM Memory 2-Mbit (128 K 16) F-RAM Memory Industrial temperature: 40 C to +85 C Features 28-pin small outline integrated circuit (SOIC) package 256-Kbit ferroelectric random access memory (F-RAM) logically organized as 32 K 8 Restriction of hazardous substances (RoHS) compliant 14 High-endurance 100 trillion (10 ) read/writes Functional Overview 151-year data retention (see the Data Retention and Endurance table) The FM18W08 is a 32 K 8 nonvolatile memory that reads and NoDelay writes writes similar to a standard SRAM. A ferroelectric random Advanced high-reliability ferroelectric process access memory or F-RAM is nonvolatile, which means that data is retained after power is removed. It provides data retention for SRAM and EEPROM compatible over 151 years while eliminating the reliability concerns, Industry-standard 32 K 8 SRAM and EEPROM pinout functional disadvantages, and system design complexities of 70-ns access time, 130-ns cycle time battery-backed SRAM (BBSRAM). Fast write timing and high write endurance make the F-RAM superior to other types of Superior to battery-backed SRAM modules memory. No battery concerns The FM18W08 operation is similar to that of other RAM devices Monolithic reliability and therefore, it can be used as a drop-in replacement for a True surface mount solution, no rework steps standard SRAM in a system. Minimum read and write cycle times Superior for moisture, shock, and vibration are equal. The F-RAM memory is nonvolatile due to its unique Resistant to negative voltage undershoots ferroelectric memory process. These features make the FM18W08 ideal for nonvolatile memory applications requiring Low power consumption frequent or rapid writes. Active current 12 mA (max) The device is available in a 28-pin SOIC surface mount package. Standby current 20 A (typ) Device specifications are guaranteed over the industrial Wide voltage operation: V = 2.7 V to 5.5 V temperature range 40 C to +85 C. DD For a complete list of related documentation, click here. Logic Block Diagram A 14-0 A 14-0 32 K x 8 F-RAM Array CE Control DQ WE Logic 7-0 I/O Latch & Bus Driver OE Cypress Semiconductor Corporation 198 Champion Court San Jose, CA 95134-1709 408-943-2600 Document Number: 001-86207 Rev. *D Revised November 13, 2014 Address Latch and DecoderFM18W08 Contents Pinout ................................................................................ 3 AC Switching Characteristics ......................................... 9 Pin Definitions .................................................................. 3 SRAM Read Cycle ...................................................... 9 Device Operation .............................................................. 4 SRAM Write Cycle..................................................... 10 Memory Architecture ................................................... 4 Power Cycle Timing ....................................................... 12 Memory Operation....................................................... 4 Functional Truth Table................................................... 13 Read Operation ........................................................... 4 Ordering Information...................................................... 14 Write Operation ........................................................... 4 Ordering Code Definitions......................................... 14 Pre-charge Operation.................................................. 4 Package Diagram............................................................ 15 Endurance ......................................................................... 4 Acronyms........................................................................ 16 F-RAM Design Considerations........................................ 5 Document Conventions ................................................. 16 Maximum Ratings............................................................. 7 Units of Measure ....................................................... 16 Operating Range............................................................... 7 Document History Page................................................. 17 DC Electrical Characteristics .......................................... 7 Sales, Solutions, and Legal Information ...................... 18 Data Retention and Endurance ....................................... 7 Worldwide Sales and Design Support....................... 18 Capacitance ...................................................................... 8 Products .................................................................... 18 Thermal Resistance.......................................................... 8 PSoC Solutions ...................................................... 18 AC Test Conditions .......................................................... 8 Cypress Developer Community................................. 18 Technical Support ..................................................... 18 Document Number: 001-86207 Rev. *D Page 2 of 18

Tariff Desc

8542.32.00 32 No ..CMOS and MOS Read Only Memory and Programmable Read Only Memory whether erasable or non-erasable (for example, flash memory, EPROM, E2PROM, EAPROM, NOVRAM, ROM and PROM)
Cypress
Cypress / Spansion
CYPRESS SEMI
Cypress Semicon
Cypress Semiconductor
Cypress Semiconductor Corp
INF
INFINEON
Infineon IR
INFINEON (CYPRESS)
Infineon (IRF)
Infineon / Cypress
Infineon / IR
INFINEON TECH ICs
Infineon Technologies
INFINEON TECHNOLOGIES AG
Infineon Technologies Americas Corp.
Infinite Power Solutions
INTERNATIONAL RECTIF
INTERNATIONAL RECTIFIER
International Rectifier HiRel Products
INTL RECTIFIER
IR
IRH
Ramtron
Ramtron / Cypress Semiconductor
Ramtron International Corp
SP9
SPANSION
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