FM22L16-55-TG Infineon

Please note that Cypress is an Infineon Technologies Company. The document following this cover page is marked as Cypress document as this is the company that originally developed the product. Please note that Infineon will continue to offer the product to new and existing customers as part of the Infineon product portfolio. Continuity of document content The fact that Infineon offers the following product as part of the Infineon product portfolio does not lead to any changes to this document. Future revisions will occur when appropriate, and any changes will be set out on the document history page. Continuity of ordering part numbers Infineon continues to support existing part numbers. Please continue to use the ordering part numbers listed in the datasheet for ordering. www.infineon.comFM22L16 4-Mbit (256K 16) F-RAM 4-Mbit (256K 16) F-RAM 44-pin thin small outline package (TSOP) Type II Features Restriction of hazardous substances (RoHS) compliant 4-Mbit ferroelectric random access memory (F-RAM) logically organized as 256K 16 Functional Description Configurable as 512K 8 using UB and LB 14 High-endurance 100 trillion (10 ) read/writes The FM22L16 is a 256K 16 nonvolatile memory that reads and writes similar to a standard SRAM. A ferroelectric random 151-year data retention (see Data Retention and Endurance on page 10) access memory or F-RAM is nonvolatile, which means that data is retained after power is removed. It provides data retention for NoDelay writes over 151 years while eliminating the reliability concerns, Page mode operation to 25 ns cycle time functional disadvantages, and system design complexities of Advanced high-reliability ferroelectric process battery-backed SRAM (BBSRAM). Fast write timing and high SRAM compatible write endurance make the F-RAM superior to other types of Industry-standard 256K 16 SRAM pinout memory. 55-ns access time, 110-ns cycle time The FM22L16 operation is similar to that of other RAM devices and therefore, it can be used as a drop-in replacement for a Advanced features standard SRAM in a system. Read and write cycles may be Software-programmable block write-protect triggered by CE or simply by changing the address. The F-RAM Superior to battery-backed SRAM modules memory is nonvolatile due to its unique ferroelectric memory No battery concerns process. These features make the FM22L16 ideal for nonvolatile Monolithic reliability memory applications requiring frequent or rapid writes. True surface mount solution, no rework steps The FM22L16 includes a low voltage monitor that blocks access Superior for moisture, shock, and vibration to the memory array when V drops below V min. The DD DD memory is protected against an inadvertent access and data Low power consumption corruption under this condition. The device also features Active current 8 mA (typ) software-controlled write protection. The memory array is Standby current 90 A (typ) divided into 8 uniform blocks, each of which can be individually Sleep mode current 5 A (max) write protected. Low-voltage operation: V = 2.7 V to 3.6 V The device is available in a 400-mil, 44-pin TSOP-II surface DD mount package. Device specifications are guaranteed over the Industrial temperature: 40 C to +85 C industrial temperature range 40 C to +85 C. For a complete list of related documentation, click here. Logic Block Diagram 32 K x 16 block 32 K x 16 block 32 K x 16 block 32 K x 16 block A 17-2 A 17-0 32 K x 16 block 32 K x 16 block A 1-0 32 K x 16 block 32 K x 16 block . CE Column Decoder WE DQ 15-0 Control I/O Latch & Bus Driver UB, LB Logic OE ZZ Cypress Semiconductor Corporation 198 Champion Court San Jose, CA 95134-1709 408-943-2600 Document Number: 001-86188 Rev. *H Revised November 20, 2019 Address Latch & Write Protect Block & Row Decoder .