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X-On Electronics has gained recognition as a prominent supplier of FM24C04B-G F-RAM across the USA, India, Europe, Australia, and various other global locations. FM24C04B-G F-RAM are a product manufactured by Infineon. We provide cost-effective solutions for F-RAM, ensuring timely deliveries around the world.

FM24C04B-G Infineon

FM24C04B-G electronic component of Infineon
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See Product Specifications
Part No.FM24C04B-G
Manufacturer: Infineon
Category: F-RAM
Description: F-RAM 4Kb Serial I2C 5V FRAM
Datasheet: FM24C04B-G Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 1.3745 ea
Line Total: USD 1.37 
Availability - 8354
Ship by Mon. 30 Dec to Wed. 01 Jan
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
2898
Ship by Wed. 01 Jan to Tue. 07 Jan
MOQ : 39
Multiples : 1
39 : USD 1.7613
45 : USD 1.5008
100 : USD 1.3588
500 : USD 1.3452
1000 : USD 1.25
2500 : USD 1.2375
5820 : USD 1.2251

8354
Ship by Mon. 30 Dec to Wed. 01 Jan
MOQ : 1
Multiples : 1
1 : USD 1.3745
10 : USD 1.2243
100 : USD 1.2243
500 : USD 1.2012
1000 : USD 1.1781
2910 : USD 1.1666
5820 : USD 1.1516
11640 : USD 1.1446

867
Ship by Mon. 30 Dec to Wed. 01 Jan
MOQ : 1
Multiples : 1
1 : USD 5.0568
3 : USD 4.5276
6 : USD 3.3957
15 : USD 3.2046
194 : USD 3.0723

865
Ship by Wed. 01 Jan to Tue. 07 Jan
MOQ : 26
Multiples : 1
26 : USD 1.6944
50 : USD 1.6807
100 : USD 1.6516
200 : USD 1.6482
500 : USD 1.6448

2898
Ship by Wed. 01 Jan to Tue. 07 Jan
MOQ : 7
Multiples : 1
7 : USD 1.9473
10 : USD 1.6538
100 : USD 1.5128
500 : USD 1.4978
1000 : USD 1.3185
2500 : USD 1.3053
5820 : USD 1.2922

1723
Ship by Wed. 01 Jan to Tue. 07 Jan
MOQ : 284
Multiples : 1
284 : USD 1.8086
500 : USD 1.7404
1000 : USD 1.6388

5715
Ship by Wed. 01 Jan to Tue. 07 Jan
MOQ : 6
Multiples : 1
6 : USD 1.7236
10 : USD 1.5218
100 : USD 1.4192
500 : USD 1.4051
1000 : USD 1.2708
2500 : USD 1.2582
5820 : USD 1.2456

   
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We are delighted to provide the FM24C04B-G from our F-RAM category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the FM24C04B-G and other electronic components in the F-RAM category and beyond.

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FM24C04B 2 4-Kbit (512 8) Serial (I C) F-RAM 4-Kbit (512 8) Serial (I2C) F-RAM Features Functional Description The FM24C04B is a 4-Kbit nonvolatile memory employing an 4-Kbit ferroelectric random access memory (F-RAM) logically advanced ferroelectric process. A ferroelectric random access organized as 512 8 14 memory or F-RAM is nonvolatile and performs reads and writes High-endurance 100 trillion (10 ) read/writes similar to a RAM. It provides reliable data retention for 151 years 151-year data retention (See Data Retention and Endurance while eliminating the complexities, overhead, and system-level on page 10) reliability problems caused by EEPROM and other nonvolatile NoDelay writes memories. Advanced high-reliability ferroelectric process 2 Unlike EEPROM, the FM24C04B performs write operations at Fast 2-wire Serial interface (I C) bus speed. No write delays are incurred. Data is written to the Up to 1-MHz frequency memory array immediately after each byte is successfully 2 Direct hardware replacement for serial (I C) EEPROM transferred to the device. The next bus cycle can commence Supports legacy timings for 100 kHz and 400 kHz without the need for data polling. In addition, the product offers substantial write endurance compared with other nonvolatile Low power consumption memories. Also, F-RAM exhibits much lower power during writes 100 A active current at 100 kHz than EEPROM since write operations do not require an internally 4 A (typ) standby current elevated power supply voltage for write circuits. The FM24C04B 14 Voltage operation: V = 4.5 V to 5.5 V DD is capable of supporting 10 read/write cycles, or 100 million times more write cycles than EEPROM. AEC-Q100 grade 3 qualified These capabilities make the FM24C04B ideal for nonvolatile Industrial temperature: 40 C to +85 C memory applications, requiring frequent or rapid writes. 8-pin small outline integrated circuit (SOIC) package Examples range from data logging, where the number of write cycles may be critical, to demanding industrial controls where the Restriction of hazardous substances (RoHS) compliant long write time of EEPROM can cause data loss. The combination of features allows more frequent data writing with less overhead for the system. The FM24C04B provides substantial benefits to users of serial 2 (I C) EEPROM as a hardware drop-in replacement. The device specifications are AEC-Q100 qualified and guaranteed over an industrial temperature range of 40 C to +85 C. For a complete list of related documentation, click here. Logic Block Diagram Address 512 x 8 Counter Latch F-RAM Array 9 8 Serial to Parallel SDA Data Latch Converter 8 SCL Control Logic WP A2-A1 Cypress Semiconductor Corporation 198 Champion Court San Jose, CA 95134-1709 408-943-2600 Document Number: 001-84446 Rev. *M Revised December 5, 2018FM24C04B Contents Pinout ................................................................................3 Capacitance .................................................................... 10 Pin Definitions ..................................................................3 Thermal Resistance ........................................................ 10 Functional Overview ........................................................4 AC Test Loads and Waveforms ..................................... 10 Memory Architecture ........................................................4 AC Test Conditions ........................................................ 10 I2C Interface ......................................................................4 AC Switching Characteristics ....................................... 11 STOP Condition (P) .....................................................4 Power Cycle Timing ....................................................... 12 START Condition (S) ...................................................4 Ordering Information ...................................................... 13 Data/Address Transfer ................................................5 Ordering Code Definitions ......................................... 13 Acknowledge/No-acknowledge ...................................5 Package Diagram ............................................................ 14 Slave Device Address .................................................6 Acronyms ........................................................................ 15 Addressing Overview (Word Address) ........................6 Document Conventions ................................................. 15 Data Transfer ..............................................................6 Units of Measure ....................................................... 15 Memory Operation ............................................................6 Document History Page ................................................. 16 Write Operation ...........................................................6 Sales, Solutions, and Legal Information ...................... 18 Read Operation ...........................................................7 Worldwide Sales and Design Support ....................... 18 Endurance .........................................................................8 Products .................................................................... 18 Maximum Ratings .............................................................9 PSoC Solutions ...................................................... 18 Operating Range ...............................................................9 Cypress Developer Community ................................. 18 DC Electrical Characteristics ..........................................9 Technical Support ..................................................... 18 Data Retention and Endurance .....................................10 Document Number: 001-84446 Rev. *M Page 2 of 18

Tariff Desc

8542.32.00 32 No ..CMOS and MOS Read Only Memory and Programmable Read Only Memory whether erasable or non-erasable (for example, flash memory, EPROM, E2PROM, EAPROM, NOVRAM, ROM and PROM)
Cypress
Cypress / Spansion
CYPRESS SEMI
Cypress Semicon
Cypress Semiconductor
Cypress Semiconductor Corp
INF
INFINEON
Infineon IR
INFINEON (CYPRESS)
Infineon (IRF)
Infineon / Cypress
Infineon / IR
INFINEON TECH ICs
Infineon Technologies
INFINEON TECHNOLOGIES AG
Infineon Technologies Americas Corp.
Infinite Power Solutions
INTERNATIONAL RECTIF
INTERNATIONAL RECTIFIER
International Rectifier HiRel Products
INTL RECTIFIER
IR
IRH
Ramtron
Ramtron / Cypress Semiconductor
Ramtron International Corp
SP9
SPANSION
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