FM24C04B 2 4-Kbit (512 8) Serial (I C) F-RAM 4-Kbit (512 8) Serial (I2C) F-RAM Features Functional Description The FM24C04B is a 4-Kbit nonvolatile memory employing an 4-Kbit ferroelectric random access memory (F-RAM) logically advanced ferroelectric process. A ferroelectric random access organized as 512 8 14 memory or F-RAM is nonvolatile and performs reads and writes High-endurance 100 trillion (10 ) read/writes similar to a RAM. It provides reliable data retention for 151 years 151-year data retention (See Data Retention and Endurance while eliminating the complexities, overhead, and system-level on page 10) reliability problems caused by EEPROM and other nonvolatile NoDelay writes memories. Advanced high-reliability ferroelectric process 2 Unlike EEPROM, the FM24C04B performs write operations at Fast 2-wire Serial interface (I C) bus speed. No write delays are incurred. Data is written to the Up to 1-MHz frequency memory array immediately after each byte is successfully 2 Direct hardware replacement for serial (I C) EEPROM transferred to the device. The next bus cycle can commence Supports legacy timings for 100 kHz and 400 kHz without the need for data polling. In addition, the product offers substantial write endurance compared with other nonvolatile Low power consumption memories. Also, F-RAM exhibits much lower power during writes 100 A active current at 100 kHz than EEPROM since write operations do not require an internally 4 A (typ) standby current elevated power supply voltage for write circuits. The FM24C04B 14 Voltage operation: V = 4.5 V to 5.5 V DD is capable of supporting 10 read/write cycles, or 100 million times more write cycles than EEPROM. AEC-Q100 grade 3 qualified These capabilities make the FM24C04B ideal for nonvolatile Industrial temperature: 40 C to +85 C memory applications, requiring frequent or rapid writes. 8-pin small outline integrated circuit (SOIC) package Examples range from data logging, where the number of write cycles may be critical, to demanding industrial controls where the Restriction of hazardous substances (RoHS) compliant long write time of EEPROM can cause data loss. The combination of features allows more frequent data writing with less overhead for the system. The FM24C04B provides substantial benefits to users of serial 2 (I C) EEPROM as a hardware drop-in replacement. The device specifications are AEC-Q100 qualified and guaranteed over an industrial temperature range of 40 C to +85 C. For a complete list of related documentation, click here. Logic Block Diagram Address 512 x 8 Counter Latch F-RAM Array 9 8 Serial to Parallel SDA Data Latch Converter 8 SCL Control Logic WP A2-A1 Cypress Semiconductor Corporation 198 Champion Court San Jose, CA 95134-1709 408-943-2600 Document Number: 001-84446 Rev. *M Revised December 5, 2018FM24C04B Contents Pinout ................................................................................3 Capacitance .................................................................... 10 Pin Definitions ..................................................................3 Thermal Resistance ........................................................ 10 Functional Overview ........................................................4 AC Test Loads and Waveforms ..................................... 10 Memory Architecture ........................................................4 AC Test Conditions ........................................................ 10 I2C Interface ......................................................................4 AC Switching Characteristics ....................................... 11 STOP Condition (P) .....................................................4 Power Cycle Timing ....................................................... 12 START Condition (S) ...................................................4 Ordering Information ...................................................... 13 Data/Address Transfer ................................................5 Ordering Code Definitions ......................................... 13 Acknowledge/No-acknowledge ...................................5 Package Diagram ............................................................ 14 Slave Device Address .................................................6 Acronyms ........................................................................ 15 Addressing Overview (Word Address) ........................6 Document Conventions ................................................. 15 Data Transfer ..............................................................6 Units of Measure ....................................................... 15 Memory Operation ............................................................6 Document History Page ................................................. 16 Write Operation ...........................................................6 Sales, Solutions, and Legal Information ...................... 18 Read Operation ...........................................................7 Worldwide Sales and Design Support ....................... 18 Endurance .........................................................................8 Products .................................................................... 18 Maximum Ratings .............................................................9 PSoC Solutions ...................................................... 18 Operating Range ...............................................................9 Cypress Developer Community ................................. 18 DC Electrical Characteristics ..........................................9 Technical Support ..................................................... 18 Data Retention and Endurance .....................................10 Document Number: 001-84446 Rev. *M Page 2 of 18