X-On Electronics has gained recognition as a prominent supplier of FM24V02A-G F-RAM across the USA, India, Europe, Australia, and various other global locations. FM24V02A-G F-RAM are a product manufactured by Infineon. We provide cost-effective solutions for F-RAM, ensuring timely deliveries around the world.

FM24V02A-G Infineon

FM24V02A-G electronic component of Infineon
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Part No.FM24V02A-G
Manufacturer: Infineon
Category: F-RAM
Description: F-RAM NVRAM FRAM Memory Serial
Datasheet: FM24V02A-G Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
514: USD 5.8786 ea
Line Total: USD 3021.6 
Availability - 498
Ship by Mon. 02 Dec to Fri. 06 Dec
MOQ: 514  Multiples: 514
Pack Size: 514
Availability Price Quantity
498
Ship by Mon. 02 Dec to Fri. 06 Dec
MOQ : 970
Multiples : 970
970 : USD 5.8786

41
Ship by Mon. 02 Dec to Fri. 06 Dec
MOQ : 1
Multiples : 1
1 : USD 7.8143
10 : USD 7.4308
25 : USD 6.6313
100 : USD 6.4883
250 : USD 6.3401
500 : USD 6.2894
970 : USD 6.0814

1631
Ship by Mon. 02 Dec to Fri. 06 Dec
MOQ : 1
Multiples : 1
1 : USD 5.5237

23
Ship by Mon. 09 Dec to Thu. 12 Dec
MOQ : 1
Multiples : 1
1 : USD 11.6397
10 : USD 11.031

3336
Ship by Thu. 28 Nov to Mon. 02 Dec
MOQ : 1
Multiples : 1
1 : USD 7.513
10 : USD 6.963
25 : USD 5.951
100 : USD 5.852
250 : USD 5.786
500 : USD 5.698
970 : USD 5.632
5820 : USD 5.621

923
Ship by Mon. 02 Dec to Fri. 06 Dec
MOQ : 7
Multiples : 1
7 : USD 6.6625
50 : USD 6.5975
100 : USD 6.5812

41
Ship by Mon. 02 Dec to Fri. 06 Dec
MOQ : 2
Multiples : 1
2 : USD 7.8143
10 : USD 7.4308
25 : USD 6.6313
100 : USD 6.4883
250 : USD 6.3401
500 : USD 6.2894
970 : USD 6.0814

310
Ship by Mon. 02 Dec to Fri. 06 Dec
MOQ : 57
Multiples : 1
57 : USD 8.5638
100 : USD 8.2225
500 : USD 7.865
1000 : USD 7.4263

498
Ship by Mon. 02 Dec to Fri. 06 Dec
MOQ : 514
Multiples : 514
514 : USD 5.8786

1631
Ship by Mon. 02 Dec to Fri. 06 Dec
MOQ : 2
Multiples : 1
2 : USD 5.5237

954
Ship by Mon. 02 Dec to Fri. 06 Dec
MOQ : 57
Multiples : 1
57 : USD 8.5638
100 : USD 8.2225
500 : USD 7.865
1000 : USD 7.4263

   
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We are delighted to provide the FM24V02A-G from our F-RAM category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the FM24V02A-G and other electronic components in the F-RAM category and beyond.

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FM24V02A 2 256-Kbit (32K 8) Serial (I C) F-RAM 256-Kbit (32K 8) Serial (I2C) F-RAM Features Functional Description The FM24V02A is a 256-Kbit nonvolatile memory employing an 256-Kbit ferroelectric random access memory (F-RAM) advanced ferroelectric process. An F-RAM is nonvolatile and logically organized as 32K 8 14 performs reads and writes similar to a RAM. It provides reliable High-endurance 100 trillion (10 ) read/writes data retention for 151 years while eliminating the complexities, 151-year data retention (See the Data Retention and overhead, and system-level reliability problems caused by Endurance table) EEPROM and other nonvolatile memories. NoDelay writes Advanced high-reliability ferroelectric process Unlike EEPROM, the FM24V02A performs write operations at 2 bus speed. No write delays are incurred. Data is written to the Fast two-wire serial interface (I C) memory array immediately after each byte is successfully 1 Up to 3.4-MHz frequency transferred to the device. The next bus cycle can commence Direct hardware replacement for serial EEPROM without the need for data polling. In addition, the product offers Supports legacy timings for 100 kHz and 400 kHz substantial write endurance compared with other nonvolatile memories. F-RAM also exhibits much lower power during writes Device ID than EEPROM because write operations do not require an Manufacturer ID and Product ID internally elevated power supply voltage for write circuits. The Low power consumption 14 FM24V02A is capable of supporting 10 read/write cycles, or 175- A active current at 100 kHz 100 million times more write cycles than EEPROM. 150- A standby current These capabilities make the FM24V02A ideal for nonvolatile 8- A sleep mode current memory applications, requiring frequent or rapid writes. Low-voltage operation: V = 2.0 V to 3.6 V Examples range from data logging, where the number of write DD cycles may be critical, to demanding industrial controls where the Industrial temperature: 40 C to +85 C long write time of EEPROM can cause data loss. The 8-pin small outline integrated circuit (SOIC) package combination of features allows more frequent data writing with less overhead for the system. Restriction of hazardous substances (RoHS) compliant The FM24V02A provides substantial benefits to users of serial EEPROM as a hardware drop-in replacement. The device incorporates a read-only Device ID that allows the host to determine the manufacturer, product density, and product revision. The device specifications are guaranteed over an industrial temperature range of 40 C to +85 C. For a complete list of related resources, click here. Logic Block Diagram Address 32 K x 8 Counter Latch F-RAM Array 15 8 Serial to Parallel SDA Data Latch Converter 8 8 SCL Control Logic Device ID and WP Manufacturer ID A0-A2 Note 2 1. The FM24V02A does not meet the NXP I C specification in the Fast-mode Plus (Fm+, 1 MHz) for I and in the High Speed Mode (Hs-mode, 3.4 MHz) for V . Refer OL hys to the DC Electrical Characteristics table for more details. Cypress Semiconductor Corporation 198 Champion Court San Jose, CA 95134-1709 408-943-2600 Document Number: 001-90839 Rev. *I Revised May 11, 2017FM24V02A Contents Pinout ................................................................................3 Data Retention and Endurance ..................................... 12 Pin Definitions ..................................................................3 Capacitance ....................................................................12 Functional Overview ........................................................4 Thermal Resistance ........................................................ 12 Memory Architecture ........................................................4 AC Test Loads and Waveforms ..................................... 12 Two-wire Interface ............................................................4 AC Test Conditions ........................................................ 12 STOP Condition (P) .....................................................5 AC Switching Characteristics ....................................... 13 START Condition (S) ...................................................5 Power Cycle Timing ....................................................... 14 Data/Address Transfer ................................................5 Ordering Information ...................................................... 15 Acknowledge / No-Acknowledge .................................5 Ordering Code Definitions ......................................... 15 High Speed Mode (Hs-mode) ......................................6 Package Diagram ............................................................ 16 Slave Device Address .................................................6 Acronyms ........................................................................17 Addressing Overview ..................................................6 Document Conventions ................................................. 17 Data Transfer ..............................................................7 Units of Measure ....................................................... 17 Memory Operation ............................................................7 Document History Page ................................................. 18 Write Operation ...........................................................7 Sales, Solutions, and Legal Information ...................... 19 Read Operation ...........................................................8 Worldwide Sales and Design Support ....................... 19 Sleep Mode .................................................................9 Products ....................................................................19 Device ID .........................................................................10 PSoCSolutions .......................................................19 Maximum Ratings ...........................................................11 Cypress Developer Community ................................. 19 Operating Range .............................................................11 Technical Support ..................................................... 19 DC Electrical Characteristics ........................................11 Document Number: 001-90839 Rev. *I Page 2 of 19

Tariff Desc

8542.32.00 32 No ..CMOS and MOS Read Only Memory and Programmable Read Only Memory whether erasable or non-erasable (for example, flash memory, EPROM, E2PROM, EAPROM, NOVRAM, ROM and PROM)
Cypress
Cypress / Spansion
CYPRESS SEMI
Cypress Semicon
Cypress Semiconductor
Cypress Semiconductor Corp
INF
INFINEON
Infineon IR
INFINEON (CYPRESS)
Infineon (IRF)
Infineon / Cypress
Infineon / IR
INFINEON TECH ICs
Infineon Technologies
INFINEON TECHNOLOGIES AG
Infineon Technologies Americas Corp.
Infinite Power Solutions
INTERNATIONAL RECTIF
INTERNATIONAL RECTIFIER
International Rectifier HiRel Products
INTL RECTIFIER
IR
IRH
Ramtron
Ramtron / Cypress Semiconductor
Ramtron International Corp
SP9
SPANSION
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