FM25CL64B 64-Kbit (8K 8) Serial (SPI) Automotive F-RAM 64-Kbit (8K 8) Serial (SPI) Automotive F-RAM Features Functional Description 64-Kbit ferroelectric random access memory (F-RAM) logically The FM25CL64B is a 64-Kbit nonvolatile memory employing an organized as 8K 8 advanced ferroelectric process. A ferroelectric random access 13 High-endurance 10 trillion (10 ) read/writes memory or F-RAM is nonvolatile and performs reads and writes similar to a RAM. It provides reliable data retention for 121 years 121-year data retention (See the Data Retention and Endurance table) while eliminating the complexities, overhead, and system level reliability problems caused by serial flash, EEPROM, and other NoDelay writes nonvolatile memories. Advanced high-reliability ferroelectric process Unlike serial flash and EEPROM, the FM25CL64B performs Very fast serial peripheral interface (SPI) write operations at bus speed. No write delays are incurred. Data Up to 16 MHz frequency is written to the memory array immediately after each byte is Direct hardware replacement for serial flash and EEPROM successfully transferred to the device. The next bus cycle can Supports SPI mode 0 (0, 0) and mode 3 (1, 1) commence without the need for data polling. In addition, the Sophisticated write protection scheme product offers substantial write endurance compared with other Hardware protection using the Write Protect (WP) pin nonvolatile memories. The FM25CL64B is capable of supporting 13 Software protection using Write Disable instruction 10 read/write cycles, or 10 million times more write cycles than EEPROM. Software block protection for 1/4, 1/2, or entire array These capabilities make the FM25CL64B ideal for nonvolatile Low power consumption memory applications requiring frequent or rapid writes. 300 A active current at 1 MHz Examples range from data collection, where the number of write 6 A (typ) standby current at +85 C cycles may be critical, to demanding industrial controls where the Low-voltage operation: V = 3.0 V to 3.6 V DD long write time of serial flash or EEPROM can cause data loss. Automotive-E temperature: 40 C to +125 C The FM25CL64B provides substantial benefits to users of serial EEPROM or flash as a hardware drop-in replacement. The 8-pin small outline integrated circuit (SOIC) package FM25CL64B uses the high-speed SPI bus, which enhances the AEC-Q100 Grade 1 compliant high-speed write capability of F-RAM technology. The device specifications are guaranteed over an automotive-e temperature Restriction of hazardous substances (RoHS) compliant range of 40 C to +125 C. 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Logic Block Diagram WP Instruction Decoder CS Clock Generator Control Logic HOLD Write Protect SCK 8 K x 8 F-RAM Array Instruction Register 13 8 Address Register Counter SI SO Data OI/ Register 3 Nonvolatile Status Register Cypress Semiconductor Corporation 198 Champion Court San Jose, CA 95134-1709 408-943-2600 Document Number: 001-86149 Rev. *F Revised May 24, 2017FM25CL64B Contents Pinout ................................................................................3 Example of an F-RAM Life Time Pin Definitions ..................................................................3 in an AEC-Q100 Automotive Application ..................... 13 Functional Overview ........................................................4 Capacitance ....................................................................13 Memory Architecture ........................................................4 Thermal Resistance ........................................................ 13 Serial Peripheral Interface SPI Bus ..............................4 AC Test Conditions ........................................................ 13 SPI Overview ...............................................................4 AC Switching Characteristics ....................................... 14 SPI Modes ...................................................................6 Power Cycle Timing ....................................................... 16 Power Up to First Access ............................................6 Ordering Information ...................................................... 17 Command Structure ....................................................6 Ordering Code Definitions ......................................... 17 WREN - Set Write Enable Latch .................................7 Package Diagram ............................................................ 18 WRDI - Reset Write Enable Latch ...............................7 Acronyms ........................................................................19 Status Register and Write Protection .............................7 Document Conventions ................................................. 19 RDSR - Read Status Register .....................................8 Units of Measure ....................................................... 19 WRSR - Write Status Register ....................................8 Document History Page ................................................. 20 Memory Operation ............................................................9 Sales, Solutions, and Legal Information ...................... 21 Write Operation ...........................................................9 Worldwide Sales and Design Support ....................... 21 Read Operation ...........................................................9 Products ....................................................................21 HOLD Pin Operation .................................................10 PSoC Solutions ...................................................... 21 Endurance .................................................................11 Cypress Developer Community ................................. 21 Maximum Ratings ...........................................................12 Technical Support ..................................................... 21 Operating Range .............................................................12 DC Electrical Characteristics ........................................12 Data Retention and Endurance .....................................13 Document Number: 001-86149 Rev. *F Page 2 of 21