Please note that Cypress is an Infineon Technologies Company. The document following this cover page is marked as Cypress document as this is the company that originally developed the product. Please note that Infineon will continue to offer the product to new and existing customers as part of the Infineon product portfolio. Continuity of document content The fact that Infineon offers the following product as part of the Infineon product portfolio does not lead to any changes to this document. Future revisions will occur when appropriate, and any changes will be set out on the document history page. Continuity of ordering part numbers Infineon continues to support existing part numbers. Please continue to use the ordering part numbers listed in the datasheet for ordering. www.infineon.comFM25V05 512-Kbit (64K 8) Serial (SPI) F-RAM 512-Kbit (64K 8) Serial (SPI) F-RAM Features Functional Description 512-Kbit ferroelectric random access memory (F-RAM) The FM25V05 is a 512-Kbit nonvolatile memory employing an logically organized as 64K 8 advanced ferroelectric process. A ferroelectric random access 14 High-endurance 100 trillion (10 ) read/writes memory or F-RAM is nonvolatile and performs reads and writes similar to a RAM. It provides reliable data retention for 151 years 151-year data retention (See Data Retention and Endurance on page 14) while eliminating the complexities, overhead, and system-level reliability problems caused by serial flash, EEPROM, and other NoDelay writes nonvolatile memories. Advanced high-reliability ferroelectric process Unlike serial flash and EEPROM, the FM25V05 performs write Very fast serial peripheral interface (SPI) operations at bus speed. No write delays are incurred. Data is Up to 40-MHz frequency written to the memory array immediately after each byte is Direct hardware replacement for serial flash and EEPROM successfully transferred to the device. The next bus cycle can Supports SPI mode 0 (0, 0) and mode 3 (1, 1) commence without the need for data polling. In addition, the Sophisticated write protection scheme product offers substantial write endurance compared with other Hardware protection using the Write Protect (WP) pin nonvolatile memories. The FM25V05 is capable of supporting 14 10 read/write cycles, or 100 million times more write cycles Software protection using Write Disable instruction than EEPROM. Software block protection for 1/4, 1/2, or entire array These capabilities make the FM25V05 ideal for nonvolatile Device ID memory applications, requiring frequent or rapid writes. Manufacturer ID and Product ID Examples range from data collection, where the number of write Low power consumption cycles may be critical, to demanding industrial controls where the 300 A active current at 1 MHz long write time of serial flash or EEPROM can cause data loss. 90 A (typ) standby current The FM25V05 provides substantial benefits to users of serial 5 A sleep mode current EEPROM or flash as a hardware drop-in replacement. The FM25V05 uses the high-speed SPI bus, which enhances the Low-voltage operation: V = 2.0 V to 3.6 V DD high-speed write capability of F-RAM technology. The device Industrial temperature: 40 C to +85 C incorporates a read-only Device ID that allows the host to determine the manufacturer, product density, and product 8-pin small outline integrated circuit (SOIC) package revision. The device specifications are guaranteed over an Restriction of hazardous substances (RoHS) compliant industrial temperature range of 40 C to +85 C. For a complete list of related documentation, click here. Logic Block Diagram WP Instruction Decoder CS Clock Generator Control Logic HOLD Write Protect SCK 64 K x 8 F-RAM Array Instruction Register 16 8 Address Register Counter SI SO Data OI/ Register 3 Nonvolatile Status Register Cypress Semiconductor Corporation 198 Champion Court San Jose, CA 95134-1709 408-943-2600 Document Number: 001-84497 Rev. *H Revised November 12, 2018