X-On Electronics has gained recognition as a prominent supplier of FM25V10-DG F-RAM across the USA, India, Europe, Australia, and various other global locations. FM25V10-DG F-RAM are a product manufactured by Infineon. We provide cost-effective solutions for F-RAM, ensuring timely deliveries around the world.

FM25V10-DG Infineon

FM25V10-DG electronic component of Infineon
FM25V10-DG Infineon
FM25V10-DG F-RAM
FM25V10-DG  Semiconductors

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See Product Specifications
Part No. FM25V10-DG
Manufacturer: Infineon
Category: F-RAM
Description: F-RAM F-RAM Memory Serial
Datasheet: FM25V10-DG Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 14.2159 ea
Line Total: USD 14.22 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Wed. 19 Mar to Fri. 21 Mar
MOQ : 1
Multiples : 1
1 : USD 14.2159
10 : USD 12.8751
25 : USD 12.4841
50 : USD 12.1131
100 : USD 10.7895
250 : USD 10.4385
500 : USD 10.1276
1000 : USD 9.6965
2500 : USD 9.4057

   
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We are delighted to provide the FM25V10-DG from our F-RAM category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the FM25V10-DG and other electronic components in the F-RAM category and beyond.

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Please note that Cypress is an Infineon Technologies Company. The document following this cover page is marked as Cypress document as this is the company that originally developed the product. Please note that Infineon will continue to offer the product to new and existing customers as part of the Infineon product portfolio. Continuity of document content The fact that Infineon offers the following product as part of the Infineon product portfolio does not lead to any changes to this document. Future revisions will occur when appropriate, and any changes will be set out on the document history page. Continuity of ordering part numbers Infineon continues to support existing part numbers. Please continue to use the ordering part numbers listed in the datasheet for ordering. www.infineon.comFM25V10 1-Mbit (128K 8) Serial (SPI) F-RAM 1-Mbit (128K 8) Serial (SPI) F-RAM Features Functional Description 1-Mbit ferroelectric random access memory (F-RAM) logically The FM25V10 is a 1-Mbit nonvolatile memory employing an organized as 128K 8 advanced ferroelectric process. A ferroelectric random access 14 memory or F-RAM is nonvolatile and performs reads and writes High-endurance 100 trillion (10 ) read/writes similar to a RAM. It provides reliable data retention for 151 years 151-year data retention (See Data Retention and Endurance while eliminating the complexities, overhead, and system-level on page 16) reliability problems caused by serial flash, EEPROM, and other NoDelay writes nonvolatile memories. Advanced high-reliability ferroelectric process Unlike serial flash and EEPROM, the FM25V10 performs write Very fast serial peripheral interface (SPI) operations at bus speed. No write delays are incurred. Data is Up to 40-MHz frequency written to the memory array immediately after each byte is Direct hardware replacement for serial flash and EEPROM successfully transferred to the device. The next bus cycle can Supports SPI mode 0 (0, 0) and mode 3 (1, 1) commence without the need for data polling. In addition, the product offers substantial write endurance compared with other Sophisticated write protection scheme nonvolatile memories. The FM25V10 is capable of supporting Hardware protection using the Write Protect (WP) pin 14 10 read/write cycles, or 100 million times more write cycles Software protection using Write Disable instruction than EEPROM. Software block protection for 1/4, 1/2, or entire array These capabilities make the FM25V10 ideal for nonvolatile Device ID and Serial Number memory applications, requiring frequent or rapid writes. Manufacturer ID and Product ID Examples range from data collection, where the number of write cycles may be critical, to demanding industrial controls where the Unique Serial Number (FM25VN10) long write time of serial flash or EEPROM can cause data loss. Low power consumption The FM25V10 provides substantial benefits to users of serial 300 A active current at 1 MHz EEPROM or flash as a hardware drop-in replacement. The 90 A (typ) standby current FM25V10 uses the high-speed SPI bus, which enhances the 5 A sleep mode current high-speed write capability of F-RAM technology. The FM25VN10 is offered with a unique serial number that is Low-voltage operation: V = 2.0 V to 3.6 V DD read-only and can be used to identify a board or system. Both Industrial temperature: 40 C to +85 C the devices incorporates a read-only Device ID that allows the host to determine the manufacturer, product density, and product Packages revision. The device specifications are guaranteed over an 8-pin small outline integrated circuit (SOIC) package industrial temperature range of 40 C to +85 C. 8-pin dual flat no-leads (DFN) package For a complete list of related documentation, click here. Restriction of hazardous substances (RoHS) compliant Logic Block Diagram WP Instruction Decoder CS Clock Generator Control Logic HOLD Write Protect SCK 128 K x 8 F-RAM Array Instruction Register 17 8 Address Register Counter SI SO Data OI/ Register 3 Nonvolatile Status Register Cypress Semiconductor Corporation 198 Champion Court San Jose, CA 95134-1709 408-943-2600 Document Number: 001-84499 Rev. *K Revised November 12, 2018

Tariff Desc

8542.32.00 32 No ..CMOS and MOS Read Only Memory and Programmable Read Only Memory whether erasable or non-erasable (for example, flash memory, EPROM, E2PROM, EAPROM, NOVRAM, ROM and PROM)
Cypress
Cypress / Spansion
CYPRESS SEMI
Cypress Semicon
Cypress Semiconductor
Cypress Semiconductor Corp
INF
INFINEON
Infineon IR
INFINEON (CYPRESS)
Infineon (IRF)
Infineon / Cypress
Infineon / IR
INFINEON TECH ICs
Infineon Technologies
INFINEON TECHNOLOGIES AG
Infineon Technologies Americas Corp.
Infinite Power Solutions
INTERNATIONAL RECTIF
INTERNATIONAL RECTIFIER
International Rectifier HiRel Products
INTL RECTIFIER
IR
IRH
Ramtron
Ramtron / Cypress Semiconductor
Ramtron International Corp
SP9
SPANSION
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