X-On Electronics has gained recognition as a prominent supplier of FM25V20A-GTR F-RAM across the USA, India, Europe, Australia, and various other global locations. FM25V20A-GTR F-RAM are a product manufactured by Infineon. We provide cost-effective solutions for F-RAM, ensuring timely deliveries around the world.

FM25V20A-GTR Infineon

Hot FM25V20A-GTR electronic component of Infineon
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Part No.FM25V20A-GTR
Manufacturer: Infineon
Category: F-RAM
Description: F-RAM 2Mb, 40Mhz, 256K x 8 SPI FRAM
Datasheet: FM25V20A-GTR Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 9.5244 ea
Line Total: USD 9.52 
Availability - 333
Ship by Thu. 05 Dec to Tue. 10 Dec
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
1922
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 1
Multiples : 1
1 : USD 20.982
10 : USD 20.072
25 : USD 19.305
100 : USD 19.045
250 : USD 18.772
500 : USD 18.499
1000 : USD 18.239

333
Ship by Thu. 05 Dec to Tue. 10 Dec
MOQ : 1
Multiples : 1
1 : USD 9.5244
10 : USD 8.2764
30 : USD 7.5165
100 : USD 6.8792

1172
Ship by Tue. 26 Nov to Thu. 28 Nov
MOQ : 1
Multiples : 1
1 : USD 19.206
10 : USD 17.787
25 : USD 17.336
50 : USD 16.72
100 : USD 15.818
250 : USD 15.191
500 : USD 14.949
1000 : USD 14.949
2000 : USD 14.685

1922
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 1
Multiples : 1
1 : USD 20.982
10 : USD 20.072
25 : USD 19.305
100 : USD 19.045
250 : USD 18.772
500 : USD 18.499
1000 : USD 18.239

67
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 2
Multiples : 1
2 : USD 27.7875
5 : USD 27.4625

5820
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 2000
Multiples : 2000
2000 : USD 17.5589

   
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We are delighted to provide the FM25V20A-GTR from our F-RAM category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the FM25V20A-GTR and other electronic components in the F-RAM category and beyond.

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FM25V20A 2-Mbit (256 K 8) Serial (SPI) F-RAM FM25V20A, 2-Mbit (256 K X 8) Serial (SPI) F-RAM Features Functional Overview 2-Mbit ferroelectric random access memory (F-RAM) logically The FM25V20A is a 2-Mbit nonvolatile memory employing an organized as 256 K 8 advanced ferroelectric process. A ferroelectric random access 14 memory or F-RAM is nonvolatile and performs reads and writes High-endurance 100 trillion (10 ) read/writes similar to a RAM. It provides reliable data retention for 151 years 151-year data retention (see the Data Retention and Endur- while eliminating the complexities, overhead, and system-level ance table) reliability problems caused by serial flash, EEPROM, and other NoDelay writes nonvolatile memories. Advanced high-reliability ferroelectric process Unlike serial flash and EEPROM, the FM25V20A performs write Very fast SPI operations at bus speed. No write delays are incurred. Data is Up to 40-MHz frequency written to the memory array immediately after each byte is Direct hardware replacement for serial flash and EEPROM successfully transferred to the device. The next bus cycle can Supports SPI mode 0 (0, 0) and mode 3 (1, 1) commence without the need for data polling. In addition, the product offers substantial write endurance compared with other Sophisticated write protection scheme nonvolatile memories. The FM25V20A is capable of supporting Hardware protection using the Write Protect (WP) pin 14 10 read/write cycles, or 100 million times more write cycles Software protection using Write Disable instruction than EEPROM. Software block protection for 1/4, 1/2, or entire array These capabilities make the FM25V20A ideal for nonvolatile Device ID memory applications, requiring frequent or rapid writes. Manufacturer ID and Product ID Examples range from data collection, where the number of write cycles may be critical, to demanding industrial controls where the Low power consumption long write time of serial flash or EEPROM can cause data loss. 800 A active current at 1 MHz The FM25V20A provides substantial benefits to users of serial 100 A (typ) standby current EEPROM or flash as a hardware drop-in replacement. The 3 A sleep mode current FM25V20A uses the high-speed SPI bus, which enhances the Low-voltage operation: V = 2.0 V to 3.6 V high-speed write capability of F-RAM technology. The device DD incorporates a read-only Device ID that allows the host to Industrial temperature: 40 C to +85 C determine the manufacturer, product density, and product revision. The device specifications are guaranteed over an Packages industrial temperature range of 40 C to +85 C. 8-pin small outline integrated circuit (SOIC) package For a complete list of related documentation, click here. 8-pin dual flat no leads (DFN) package Restriction of hazardous substances (RoHS) compliant Logic Block Diagram WP Instruction Decoder CS Clock Generator Control Logic SCK Write Protect 256 K x 8 FRAM Array Instruction Register 18 8 Address Register Counter SI SO Data I/O Register 3 Nonvolatile Status Register Cypress Semiconductor Corporation 198 Champion Court San Jose, CA 95134-1709 408-943-2600 Document Number: 001-90261 Rev. *I Revised August 28, 2019FM25V20A Contents Pin Definitions ..................................................................3 Operating Range ............................................................. 12 Overview ............................................................................4 DC Electrical Characteristics ........................................ 12 Memory Architecture ...................................................4 Data Retention and Endurance ..................................... 13 Serial Peripheral Interface SPI Bus ..........................4 Capacitance .................................................................... 13 SPI Overview ...............................................................4 Thermal Resistance ........................................................ 13 SPI Modes ...................................................................5 AC Test Conditions ........................................................ 13 Power Up to First Access ............................................5 AC Switching Characteristics ....................................... 14 Command Structure ....................................................6 Power Cycle Timing ....................................................... 15 WREN - Set Write Enable Latch .................................6 Ordering Information ...................................................... 16 WRDI - Reset Write Enable Latch ...............................6 Ordering Code Definitions ......................................... 16 Status Register and Write Protection .............................7 Package Diagrams .......................................................... 17 RDSR - Read Status Register .....................................7 Acronyms ........................................................................ 19 WRSR - Write Status Register ....................................8 Document Conventions ................................................. 19 Memory Operation ............................................................9 Units of Measure ....................................................... 19 Write Operation ...........................................................9 Document History Page ................................................. 20 Read Operation ...........................................................9 Sales, Solutions, and Legal Information ...................... 21 Fast Read Operation ...................................................9 Worldwide Sales and Design Support ....................... 21 Sleep Mode ...............................................................10 Products .................................................................... 21 Device ID ...................................................................10 PSoC Solutions ...................................................... 21 Endurance .................................................................11 Cypress Developer Community ................................. 21 Maximum Ratings ...........................................................12 Technical Support ..................................................... 21 Document Number: 001-90261 Rev. *I Page 2 of 21

Tariff Desc

8542.32.00 32 No ..CMOS and MOS Read Only Memory and Programmable Read Only Memory whether erasable or non-erasable (for example, flash memory, EPROM, E2PROM, EAPROM, NOVRAM, ROM and PROM)
Cypress
Cypress / Spansion
CYPRESS SEMI
Cypress Semicon
Cypress Semiconductor
Cypress Semiconductor Corp
INF
INFINEON
Infineon IR
INFINEON (CYPRESS)
Infineon (IRF)
Infineon / Cypress
Infineon / IR
INFINEON TECH ICs
Infineon Technologies
INFINEON TECHNOLOGIES AG
Infineon Technologies Americas Corp.
Infinite Power Solutions
INTERNATIONAL RECTIF
INTERNATIONAL RECTIFIER
International Rectifier HiRel Products
INTL RECTIFIER
IR
IRH
Ramtron
Ramtron / Cypress Semiconductor
Ramtron International Corp
SP9
SPANSION
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