Please note that Cypress is an Infineon Technologies Company. The document following this cover page is marked as Cypress document as this is the company that originally developed the product. Please note that Infineon will continue to offer the product to new and existing customers as part of the Infineon product portfolio. Continuity of document content The fact that Infineon offers the following product as part of the Infineon product portfolio does not lead to any changes to this document. Future revisions will occur when appropriate, and any changes will be set out on the document history page. Continuity of ordering part numbers Infineon continues to support existing part numbers. Please continue to use the ordering part numbers listed in the datasheet for ordering. www.infineon.comFM28V020 256-Kbit (32K 8) F-RAM Memory 256-Kbit (32K 8) F-RAM Memory Packages: Features 28-pin small outline integrated circuit (SOIC) package 256-Kbit ferroelectric random access memory (F-RAM) 28-pin thin small outline package (TSOP) Type I logically organized as 32K 8 32-pin thin small outline package (TSOP) Type I 14 High-endurance 100 trillion (10 ) read/writes Restriction of hazardous substances (RoHS) compliant 151-year data retention (see Data Retention and Endurance on page 8) Functional Description NoDelay writes Page mode operation The FM28V020 is a 32K 8 nonvolatile memory that reads and Advanced high-reliability ferroelectric process writes similar to a standard SRAM. A ferroelectric random access memory or F-RAM is nonvolatile, which means that data SRAM compatible is retained after power is removed. It provides data retention for Industry-standard 32K 8 SRAM pinout over 151 years while eliminating the reliability concerns, 70-ns access time, 140-ns cycle time functional disadvantages, and system design complexities of battery-backed SRAM (BBSRAM). Fast write timing and high Superior to battery-backed SRAM modules write endurance make the F-RAM superior to other types of No battery concerns memory. Monolithic reliability The FM28V020 operation is similar to that of other RAM devices True surface mount solution, no rework steps and therefore, it can be used as a drop-in replacement for a Superior for moisture, shock, and vibration standard SRAM in a system. Read and write cycles may be Resistant to negative voltage undershoots triggered by CE or simply by changing the address. The F-RAM memory is nonvolatile due to its unique ferroelectric memory Low power consumption process. These features make the FM28V020 ideal for Active current 5 mA (typ) nonvolatile memory applications requiring frequent or rapid Standby current 90 A (typ) writes. The device is available in a 28-pin SOIC, 28-pin TSOP I and Low-voltage operation: V = 2.0 V to 3.6 V DD 32-pin TSOP I surface mount packages. Device specifications Industrial temperature: 40 C to +85 C are guaranteed over the industrial temperature range 40 C to +85 C. For a complete list of related documentation, click here. Logic Block Diagram A 14-3 A 14-0 32 K x 8 F-RAM Array A 2-0 . CE Column Decoder WE Control DQ 7-0 Logic OE I/O Latch & Bus Driver Cypress Semiconductor Corporation 198 Champion Court San Jose, CA 95134-1709 408-943-2600 Document Number: 001-86204 Rev. *H Revised November 20, 2018 Address Latch Row Decoder .