Please note that Cypress is an Infineon Technologies Company. The document following this cover page is marked as Cypress document as this is the company that originally developed the product. Please note that Infineon will continue to offer the product to new and existing customers as part of the Infineon product portfolio. Continuity of document content The fact that Infineon offers the following product as part of the Infineon product portfolio does not lead to any changes to this document. Future revisions will occur when appropriate, and any changes will be set out on the document history page. Continuity of ordering part numbers Infineon continues to support existing part numbers. Please continue to use the ordering part numbers listed in the datasheet for ordering. www.infineon.comFM28V100 1-Mbit (128K 8) F-RAM Memory 1-Mbit (128K 8) F-RAM Memory 32-pin thin small outline package (TSOP) Type I Features Restriction of hazardous substances (RoHS) compliant 1-Mbit ferroelectric random access memory (F-RAM) logically organized as 128K 8 Functional Description 14 High-endurance 100 trillion (10 ) read/writes The FM28V100 is a 128K 8 nonvolatile memory that reads and 151-year data retention (see Data Retention and Endurance writes similar to a standard SRAM. A ferroelectric random on page 7) access memory or F-RAM is nonvolatile, which means that data NoDelay writes is retained after power is removed. It provides data retention for Page mode operation to 30 ns cycle time over 151 years while eliminating the reliability concerns, Advanced high-reliability ferroelectric process functional disadvantages, and system design complexities of battery-backed SRAM (BBSRAM). Fast write timing and high SRAM compatible write endurance make the F-RAM superior to other types of Industry-standard 128K 8 SRAM pinout memory. 60-ns access time, 90-ns cycle time The FM28V100 operation is similar to that of other RAM devices Superior to battery-backed SRAM modules and therefore, it can be used as a drop-in replacement for a No battery concerns standard SRAM in a system. Read and write cycles may be Monolithic reliability triggered by chip enable or simply by changing the address. The F-RAM memory is nonvolatile due to its unique ferroelectric True surface mount solution, no rework steps memory process. These features make the FM28V100 ideal for Superior for moisture, shock, and vibration nonvolatile memory applications requiring frequent or rapid Low power consumption writes. Active current 7 mA (typ) The device is available in a 32-pin TSOP I surface mount Standby current 90 A (typ) package. Device specifications are guaranteed over the industrial temperature range 40 C to +85 C. Low-voltage operation: V = 2.0 V to 3.6 V DD For a complete list of related documentation, click here. Industrial temperature: 40 C to +85 C Logic Block Diagram A 16-3 A 16-0 128 K x 8 F-RAM Array A 2-0 . CE , CE 1 2 Column Decoder WE Control DQ Logic 7-0 OE I/O Latch & Bus Driver Cypress Semiconductor Corporation 198 Champion Court San Jose, CA 95134-1709 408-943-2600 Document Number: 001-86202 Rev. *G Revised November 20, 2018 Address Latch Row Decoder .