X-On Electronics has gained recognition as a prominent supplier of HFB20HJ20C Rectifiers across the USA, India, Europe, Australia, and various other global locations. HFB20HJ20C Rectifiers are a product manufactured by Infineon. We provide cost-effective solutions for Rectifiers, ensuring timely deliveries around the world.

HFB20HJ20C Infineon

HFB20HJ20C electronic component of Infineon
HFB20HJ20C Infineon
HFB20HJ20C Rectifiers
HFB20HJ20C  Semiconductors

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See Product Specifications
Part No. HFB20HJ20C
Manufacturer: Infineon
Category: Rectifiers
Description: Diode Switching 200V 20A 3-Pin SMD-0.5
Datasheet: HFB20HJ20C Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
50: USD 317.2926 ea
Line Total: USD 15864.63 
Availability - 0
MOQ: 50  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Fri. 10 Jan to Thu. 16 Jan
MOQ : 50
Multiples : 1
50 : USD 317.2926
100 : USD 252.0947
250 : USD 242.6316

0
Ship by Fri. 10 Jan to Thu. 16 Jan
MOQ : 1
Multiples : 1
1 : USD 490.8657

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Configuration
Vf - Forward Voltage
Max Surge Current
Brand
Operating Temp Range
Package Type
Pin Count
Operating Temperature Classification
Rad Hardened
Rectifier Type
Peak Rep Rev Volt
Rev Curr
Rev Recov Time
Avg Forward Curr Max
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the HFB20HJ20C from our Rectifiers category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the HFB20HJ20C and other electronic components in the Rectifiers category and beyond.

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PD - 94169A HFB20HJ20C TM HEXFRED Ultrafast, Soft Recovery Diode Features V = 200V R Reduced RFI and EMI Reduced Snubbing I = 20A F(AV) Extensive Characterization of Recovery Parameters Hermetic t = 20ns Surface Mount rr Description TM HEXFRED diodes are optimized to reduce losses and EMI/RFI in high frequency power conditioning systems. An extensive characterization of the recovery behavior for different values of current, temperature and di/dt simplifies the calculations of losses in the operating conditions. The softness of the recovery eliminates the need for a snubber in most applications. These devices are ideally suited for power converters, motors drives and other applications where switching losses are significant portion of the total losses. Absolute Maximum Ratings Parameter Max. Units V Cathode to Anode Voltage ( Per Leg ) 200 V R I Continuous Forward Current, T = 85C 20 F(AV) C A I Single Pulse Forward Current, T = 25C ( Per Leg) 125 FSM C P T = 25C Maximum Power Dissipation 28 W D C T T Operating Junction and Storage Temperature Range -55 to +150 C J, STG Note: D.C. = 50% rect. wave 1/2 sine wave, 60 Hz , P.W. = 8.33 ms CASE STYLE (ISOLATED BASE) ANODE COMMON ANODE CATHODE SMD-0.5 www.irf.com 1 5/08/01HFB20HJ20C Electrical Characteristics ( Per Leg ) T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Test Conditions V Cathode Anode Breakdown Voltage 200 V I = 100A R BR V Forward Voltage 1.26 I = 10A, T = -55C F F J See Fig. 1 1.11 I = 10A, T = 25C F J V See Fig. 2 1.30 I = 20A, T = 25C F J 0.96 I = 10A, T = 125C F J I Reverse Leakage Current 10 A V = V Rated R R R See Fig. 2 1.0 mA V = V Rated, T = 125C R R J C Junction Capacitance, See Fig. 3 20 pF V = 200V T R L Series Inductance 4.8 nH Measured from center of cathode pad S to center of anode pad Dynamic Recovery Characteristics ( Per Leg ) T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Test Conditions t Reverse Recovery Time 20 ns I = 1.0A,V = 30V, di /dt = 200A/s rr F R f t Reverse Recovery Time 27 ns T = 25C See Fig. rr1 J t 42 T = 125C 5 I = 20A rr2 J F I Peak Recovery Current 3.5 T = 25C See Fig. RRM1 J A I 5.5 A T = 125C 6 V = 160V RRM2 J R Q Reverse Recovery Charge 54 T = 25C See Fig. rr1 J nC Q 120 T = 125C 7 di /dt = 200A/s nC rr2 J f di /dt1 Peak Rate of Fall of Recovery Current 640 T = 25C See Fig. (rec)M J A/s di /dt2 During t 850 A/s T = 125C 8 (rec)M b J Thermal - Mechanical Characteristics Parameter Typ. Max. Units R Junction-to-Case, Single Leg Conducting 4.5 thJC C/W Wt Weight 1.0 g 2 www.irf.com

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
Cypress
Cypress / Spansion
CYPRESS SEMI
Cypress Semicon
Cypress Semiconductor
Cypress Semiconductor Corp
INF
INFINEON
Infineon IR
INFINEON (CYPRESS)
Infineon (IRF)
Infineon / Cypress
Infineon / IR
INFINEON TECH ICs
Infineon Technologies
INFINEON TECHNOLOGIES AG
Infineon Technologies Americas Corp.
Infinite Power Solutions
INTERNATIONAL RECTIF
INTERNATIONAL RECTIFIER
International Rectifier HiRel Products
INTL RECTIFIER
IR
IRH
Ramtron
Ramtron / Cypress Semiconductor
Ramtron International Corp
SP9
SPANSION
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