IDP30E60 Fast Switching Diode Product Summary V 600 V RRM I 30 A F V 1.5 V F T 175 C jmax Features 600V diode technology Fast recovery Soft switching Low reverse recovery charge Low forward voltage Easy paralleling Pb-free lead plating RoHS compliant Halogen-free according to IEC61249-2-21 Qualified according to JEDEC for target applications Type Package Ordering Code Marking Pin 1 PIN 2 PIN 3 - C A - IDP30E60 PG-TO220-2 D30E60 Maximum Ratings, at T = 25 C, unless otherwise specified j PParameterarameter SymbolSymbol ValueValue UnUnitit Repetitive peak reverse voltage V 600 V Repetitive peak reverse voltage RRMV 600 V R R M Continous forward current I A Continuous forward current F 52.3 T = 25C I A TC =25C 52.3 F C 34.9 T = 90C C T =90C 34.9 C Surge non repetitive forward current Surge non repetitive forward current I 117 I 117 A FSMF S M T = 25C, t = 10 ms, sine halfwave C p T =25C, t =10 ms, sine halfwave C p Maximum repetitive forward current I 81 A F R M Maximum repetitive forward current I 81 FRM T = 25C, t limited by t , D = 0.5 C p j,max T =25C, t limited by T , D=0.5 C p jmax Power dissipation W Power dissipation P 142.9 T = 25C P W C tot t o t 80.9 T = 90C TC =25C 142.9 C Operating junction temperature T - 40+ 17 5 T =90C j 80.9 C Storage temperature T -55...+150 s t g -55...+175 C Operating and storage temperature T , T j stg C Soldering temperature Soldering temperature T 260 C S T 260 S 1.6mm (0.063 in.) from case for 10 s wavesoldering, 1.6mm (0.063 in.) from case for 10s Rev. 2 .5 Page 1 2 0131205IDP30E60 Thermal Characteristics Parameter Symbol Values Unit min. typ. max. Characteristics - - 1.05 K/W Thermal resistance, junction - case R thJC - - 62 Thermal resistance, junction - ambient, leaded R thJA SMD version, device on PCB: R thJA min. footprint - - 62 2 1) 6 cm cooling area - 35 - Electrical Characteristics, at T = 25 C, unless otherwise specified j Parameter Symbol Values Unit min. typ. max. Static Characteristics Reverse leakage current I A R V =600V, T =25C - - 50 R j V =600V, T =150C - - 2500 R j Forward voltage drop V V F I =30A, T =25C - 1.5 2 F j I =30A, T =150C - 1.5 - F j 1 Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm (one layer, 70 m thick) copper area for drain connection. PCB is vertical without blown air. Rev.2.5 Page 2 20131205