IDW100E60 Fast Switching Emitter Controlled Diode Features: 600V Emitter Controlled technology Fast recovery Soft switching Low reverse recovery charge Low forward voltage 175C junction operating temperature Easy paralleling Pb-free lead plating RoHS compliant Complete product spectrum and PSpice Models: IDW100E60 Thermal Resistance Parameter Symbol Conditions Max. Value Unit Characteristic Thermal resistance, R 0.40 K/W t h J C junction case Thermal resistance, R 40 t h J A junction ambient Electrical Characteristic, at T = 25 C, unless otherwise specified j Value Parameter Symbol Conditions Unit min. typ. max. Static Characteristic I =0.25mA Collector-emitter breakdown voltage V R 600 - - V R R M Diode forward voltage V I =100A F F T =25 C - 1.65 2.0 j - 1.65 - T =175 C j I V =600V Reverse leakage current A R R - - 40 T =25 C j - - 3300 T =175 C j Dynamic Electrical Characteristics t Diode reverse recovery time T =25 C - 120 - ns r r j Q Diode reverse recovery charge V =400V, - 3.6 - C r r R I I =100A, Diode peak reverse recovery current - 49.5 - A r r F dI /dt dI /dt=1200A/s Diode peak rate of fall of reverse F - 750 - A/s r r recovery current during t b Diode reverse recovery time t - 168 - ns r r T =125 C j Diode reverse recovery charge Q V =400V, - 5.8 - C r r m R Diode peak reverse recovery current I I =100A, - 61.6 - A r r F dI /dt=1200A/s Diode peak rate of fall of reverse dI /dt - 705 - A/s r r F recovery current during t b t Diode reverse recovery time T =175 C - 200 - ns r r j Q Diode reverse recovery charge V =400V, - 7.8 - C r r m R Diode peak reverse recovery current I I =100A, - 67.0 - A r r F dI /dt dI /dt=1200A/s Diode peak rate of fall of reverse F - 650 - A/s r r recovery current during t b 2 Rev. 2.3 20.09.2013 IFAG IPC TD VLS