IDW75E60 Infineon

IDW75E60 Fast Switching Emitter Controlled Diode Features: 600V EmCon technology Fast recovery Soft switching Low reverse recovery charge Low forward voltage 175C junction operating temperature Easy paralleling Pb-free lead plating RoHS compliant Complete product spectrum and PSpice Models: IDW75E60 Thermal Resistance Parameter Symbol Conditions Max. Value Unit Characteristic Thermal resistance, R 0.5 K/W t h J C junction case Thermal resistance, R 40 t h J A junction ambient Electrical Characteristic, at T = 25 C, unless otherwise specified j Value Parameter Symbol Conditions Unit min. typ. max. Static Characteristic V I R=0.25mA Collector-emitter breakdown voltage 600 - - V R R M V I =75A Diode forward voltage F F - 1.65 2.0 T =25 C j - 1.65 - T =175 C j Reverse leakage current I V =600V R R A T =25 C - - 40 j - - 2500 T =175 C j Dynamic Electrical Characteristics Diode reverse recovery time t - 121 - ns T =25 C r r j Diode reverse recovery charge Q V =400V, I =75A, - 2.4 - C r r R F Diode peak reverse recovery current I dI /dt=1460A/s - 38.5 - A r r F Diode peak rate of fall of reverse dI /dt - 921 - A/s r r recovery current during t b t Diode reverse recovery time T =125 C - 155 - ns r r j Diode reverse recovery charge Q - 4.4 - C V =400V, I =75A, r r m R F I dI /dt=1460A/s Diode peak reverse recovery current - 46.6 - A r r F dI /dt Diode peak rate of fall of reverse - 960 - A/s r r recovery current during t b Diode reverse recovery time t - 182 - ns T =175 C r r j Diode reverse recovery charge Q V =400V, I =75A, - 5.8 - C r r m R F Diode peak reverse recovery current I dI /dt=1460A/s - 56.2 - A r r F Diode peak rate of fall of reverse dI /dt - 1013 - A/s r r recovery current during t b 2 Rev. 2.2 20.09.2013 IFAG IPC TD VLS