IGA03N120H2 Infineon

IGA03N120H2 HighSpeed 2-Technology C Designed for: - TV Horizontal Line Deflection G nd E 2 generation HighSpeed-Technology for 1200V applications offers: - loss reduction in resonant circuits - temperature stable behavior - parallel switching capability - tight parameter distribution - E optimized for I =3A PG-TO220-3-34 off C (FullPAK) - simple Gate-Control PG-TO220-3-31 (FullPAK) 1 Qualified according to JEDEC for target applications Pb-free lead plating RoHS compliant Complete product spectrum and PSpice Models : IGA03N120H2 Thermal Resistance Parameter Symbol Conditions Max. Value Unit Characteristic IGBT thermal resistance, R 4.3 K/W thJC junction case Thermal resistance, R 64 thJA junction ambient Electrical Characteristic, at T = 25 C, unless otherwise specified j Value Parameter Symbol Conditions Unit min. Typ. max. Static Characteristic Collector-emitter breakdown voltage V 1200 - - V (BR)CES V =0V, I =300A GE C Collector-emitter saturation voltage V V = 15V, I =3A CE(sat) GE C - 2.2 2.8 T =25C j - 2.5 - T =150C j V = 10V, I =3A, GE C T =25C j - 2.4 - Gate-emitter threshold voltage V I =90A,V =V 2.1 3 3.9 GE(th) C CE GE Zero gate voltage collector current I V =1200V,V =0V A CES CE GE - - 20 T =25C j - - 80 T =150C j Gate-emitter leakage current I V =0V,V =20V - - 100 nA GES CE GE Transconductance g V =20V, I =3A - 2 - S fs CE C Dynamic Characteristic Input capacitance C V =25V - 205 - pF iss CE V =0V Output capacitance C - 24 - oss GE f=1MHz Reverse transfer capacitance C - 7 - rss Gate charge Q V =960V, I =3A - 8.6 - nC Gate CC C V =15V GE L Internal emitter inductance - 7 - nH E measured 5mm (0.197 in.) from case 2 Rev. 2.2 July 06 Power Semiconductors