IGP01N120H2 IGD01N120H2 HighSpeed 2-Technology C Designed for: - SMPS - Lamp Ballast G E - ZVS-Converter - optimised for soft-switching / resonant topologies nd 2 generation HighSpeed-Technology for 1200V applications offers: PG-TO-252-3-1 - loss reduction in resonant circuits - temperature stable behavior - parallel switching capability - tight parameter distribution PG-TO-220-3-1 - E optimized for I =1A off C 2 Qualified according to JEDEC for target applications Pb-free lead plating RoHS compliant Complete product spectrum and PSpice Models : IGP01N120H2 IGD01N120H2 Thermal Resistance Parameter Symbol Conditions Max. Value Unit Characteristic IGBT thermal resistance, R 4.5 K/W thJC junction case Thermal resistance, R PG-TO-220-3-1 62 thJA junction ambient 1) SMD version, device on PCB R PG-TO-252-3-1 50 thJA Electrical Characteristic, at T = 25 C, unless otherwise specified j Value Parameter Symbol Conditions Unit min. Typ. max. Static Characteristic Collector-emitter breakdown voltage V 1200 - - V V =0V, I =300A (BR)CES GE C Collector-emitter saturation voltage V V = 15V, I =1A CE(sat) GE C - 2.2 2.8 T =25C j - 2.5 - T =150C j V = 10V, I =1A, GE C T =25C j - 2.4 - Gate-emitter threshold voltage V I =30A,V =V 2.1 3 3.9 GE(th) C CE GE I V =1200V,V =0V Zero gate voltage collector current A CES CE GE - - 20 T =25C j - - 80 T =150C j Gate-emitter leakage current I V =0V,V =20V - - 40 nA GES CE GE Transconductance g V =20V, I =1A - 0.75 - S fs CE C Dynamic Characteristic Input capacitance C V =25V, - 91.6 - pF iss CE V =0V, Output capacitance C - 9.8 - oss GE f=1MHz Reverse transfer capacitance C - 3.4 - rss Gate charge Q V =960V, I =1A - 8.6 - nC Gate CC C V =15V GE Internal emitter inductance L - 7 - nH E measured 5mm (0.197 in.) from case 1) 2 Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm (one layer, 70m thick) copper area for collector connection. PCB is vertical without blown air. 2 Rev. 2.4 Sept. 07 Power Semiconductors