IGW08T120 TrenchStop Series q Low Loss IGBT in TrenchStop and Fieldstop technology C Short circuit withstand time 10s Designed for : - Frequency Converters G E - Uninterrupted Power Supply TrenchStop and Fieldstop technology for 1200 V applications offers : - very tight parameter distribution - high ruggedness, temperature stable behavior NPT technology offers easy parallel switching capability due to positive temperature coefficient in V CE(sat) Low EMI PG-TO-247-3 Low Gate Charge 1 Qualified according to JEDEC for target applications Pb-free lead plating RoHS compliant Complete product spectrum and PSpice Models : IGW08T120 TrenchStop Series q Thermal Resistance Parameter Symbol Conditions Max. Value Unit Characteristic IGBT thermal resistance, R 1.7 K/W thJC junction case Thermal resistance, R 40 thJA junction ambient Electrical Characteristic, at T = 25 C, unless otherwise specified j Value Parameter Symbol Conditions Unit min. typ. max. Static Characteristic Collector-emitter breakdown voltage V V =0V, I =0.5mA 1200 - - V (BR)CES GE C Collector-emitter saturation voltage V V = 15V, I =8A CE(sat) GE C - 1.7 2.2 T =25C j - 2.0 - T =125C j - 2.2 - =150C T j Gate-emitter threshold voltage V I =0.3mA,V =V 5.0 5.8 6.5 GE(th) C CE GE Zero gate voltage collector current I V =1200V, mA CES CE V =0V GE T =25C j - - 0.2 T =150C j - - 2.0 Gate-emitter leakage current I V =0V,V =20V - - 100 nA GES CE GE Transconductance g V =20V, I =8A - 5 - S fs CE C Integrated gate resistor R none Gint Dynamic Characteristic Input capacitance C -V =25V, 600 - pF iss CE Output capacitance C V =0V, - 36 - GE oss f=1MHz Reverse transfer capacitance C - 28 - rss Gate charge Q V =960V, I =8A - 53 - nC Gate CC C V =15V GE Internal emitter inductance L - 13 - nH E measured 5mm (0.197 in.) from case 1) Short circuit collector current I V =15V,t 10s - 48 - A C(SC) GE SC V = 600V, CC T = 25C j 1) Allowed number of short circuits: <1000 time between short circuits: >1s. 2 Rev. 2.6 Nov. 09 Power Semiconductors