X-On Electronics has gained recognition as a prominent supplier of IGW25N120H3FKSA1 IGBT Transistors across the USA, India, Europe, Australia, and various other global locations. IGW25N120H3FKSA1 IGBT Transistors are a product manufactured by Infineon. We provide cost-effective solutions for IGBT Transistors, ensuring timely deliveries around the world.

IGW25N120H3FKSA1 Infineon

IGW25N120H3FKSA1 electronic component of Infineon
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Part No.IGW25N120H3FKSA1
Manufacturer: Infineon
Category: IGBT Transistors
Description: IGBT Transistors IGBT PRODUCTS
Datasheet: IGW25N120H3FKSA1 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 4.807 ea
Line Total: USD 4.81 
Availability - 3428
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
1
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 240
Multiples : 240
240 : USD 3.029

3428
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ : 1
Multiples : 1
1 : USD 4.807
10 : USD 4.631
25 : USD 3.179
100 : USD 2.739
240 : USD 2.728
480 : USD 2.53

455
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 6
Multiples : 1
6 : USD 7.7838
10 : USD 6.0125
50 : USD 5.2812
100 : USD 4.4038
200 : USD 4.3062
240 : USD 4.29

870
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 3
Multiples : 1
3 : USD 5.5555

232
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 6
Multiples : 1
6 : USD 7.3775
10 : USD 6.37
50 : USD 4.5337
100 : USD 3.9812

   
Manufacturer
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RoHS - XON
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Collector- Emitter Voltage VCEO Max
Collector-Emitter Saturation Voltage
Maximum Gate Emitter Voltage
Continuous Collector Current at 25 C
Gate-Emitter Leakage Current
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Pd - Power Dissipation
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We are delighted to provide the IGW25N120H3FKSA1 from our IGBT Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the IGW25N120H3FKSA1 and other electronic components in the IGBT Transistors category and beyond.

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IGBT High speed IGBT in Trench and Fieldstop technology recommended in combination with SiC Diode IDH15S120 IGW25N120H3 1200V high speed switching series third generation Data sheet Industrial Power ControlIGW25N120H3 High speed switching series third generation High speed IGBT in Trench and Fieldstop technology recommended in combination with SiC Diode IDH15S120 Features: C TM TRENCHSTOP technology offering best in class switching performance: less than 500J total switching losses achievable very low V CEsat low EMI G maximum junction temperature 175C E qualified according to JEDEC for target applications Pb-free lead plating RoHS compliant complete product spectrum and PSpice Models:

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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