X-On Electronics has gained recognition as a prominent supplier of IGW25N120H3XK IGBT Transistors across the USA, India, Europe, Australia, and various other global locations. IGW25N120H3XK IGBT Transistors are a product manufactured by Infineon. We provide cost-effective solutions for IGBT Transistors, ensuring timely deliveries around the world.

IGW25N120H3XK Infineon

IGW25N120H3XK electronic component of Infineon
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Part No.IGW25N120H3XK
Manufacturer: Infineon
Category: IGBT Transistors
Description: IGBT Transistors IGBT PRODUCTS
Datasheet: IGW25N120H3XK Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
240: USD 4.8035 ea
Line Total: USD 1152.84 
Availability - 0
MOQ: 240  Multiples: 240
Pack Size: 240
Availability Price Quantity
0
Ship by Mon. 02 Dec to Wed. 04 Dec
MOQ : 240
Multiples : 240
240 : USD 4.8035

   
Manufacturer
Product Category
RoHS - XON
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Collector- Emitter Voltage VCEO Max
Collector-Emitter Saturation Voltage
Maximum Gate Emitter Voltage
Continuous Collector Current at 25 C
Gate-Emitter Leakage Current
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Technology
Mounting Style
Technology
Pd - Power Dissipation
Minimum Operating Temperature
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Mxhts
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We are delighted to provide the IGW25N120H3XK from our IGBT Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the IGW25N120H3XK and other electronic components in the IGBT Transistors category and beyond.

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IGBT High speed IGBT in Trench and Fieldstop technology recommended in combination with SiC Diode IDH15S120 IGW25N120H3 1200V high speed switching series third generation Data sheet Industrial Power ControlIGW25N120H3 High speed switching series third generation High speed IGBT in Trench and Fieldstop technology recommended in combination with SiC Diode IDH15S120 Features: C TM TRENCHSTOP technology offering best in class switching performance: less than 500J total switching losses achievable very low V CEsat low EMI G maximum junction temperature 175C E qualified according to JEDEC for target applications Pb-free lead plating RoHS compliant complete product spectrum and PSpice Models:

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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