IGW25T120 TrenchStop Series Low Loss IGBT in TrenchStop and Fieldstop technology C Short circuit withstand time 10s Designed for : - Frequency Converters G E - Uninterrupted Power Supply TrenchStop and Fieldstop technology for 1200 V applications offers : - very tight parameter distribution - high ruggedness, temperature stable behavior NPT technology offers easy parallel switching capability due to positive temperature coefficient in V CE(sat) PG-TO-247-3 Low EMI Low Gate Charge 1 Qualified according to JEDEC for target applications Pb-free lead plating RoHS compliant Complete product spectrum and PSpice Models : IGW25T120 TrenchStop Series Thermal Resistance Parameter Symbol Conditions Max. Value Unit Characteristic IGBT thermal resistance, R 0.65 K/W thJC junction case Thermal resistance, R 40 thJA junction ambient Electrical Characteristic, at T = 25 C, unless otherwise specified j Value Parameter Symbol Conditions Unit min. typ. max. Static Characteristic Collector-emitter breakdown voltage V V =0V, I =500A 1200 - - V (BR)CES GE C Collector-emitter saturation voltage V V = 15V, I =25A CE(sat) GE C - 1.7 2.2 T =25C j - 2.0 - T =125C j - 2.2 - T =150C j Gate-emitter threshold voltage V I =1mA, 5.0 5.8 6.5 GE(th) C V =V CE GE Zero gate voltage collector current I V =1200V, mA CES CE V =0V GE T =25C j - - 0.25 T =150C j - - 2.5 Gate-emitter leakage current I V =0V,V =20V - - 600 nA GES CE GE Transconductance g V =20V, I =25A - 16 - S fs CE C Integrated gate resistor R 8 Gint Dynamic Characteristic Input capacitance C - V =25V, 1860 - pF iss CE V =0V, Output capacitance C - 96 - oss GE f=1MHz Reverse transfer capacitance C - 82 - rss Gate charge Q V =960V, I =25A - 155 - nC Gate CC C V =15V GE Internal emitter inductance L - 13 - nH E measured 5mm (0.197 in.) from case 1) Short circuit collector current I - 150 - A V =15V,t 10s C(SC) GE SC V = 600V, CC T = 25C j 1) Allowed number of short circuits: <1000 time between short circuits: >1s. 2 Rev. 2.4 Nov. 09 Power Semiconductors