X-On Electronics has gained recognition as a prominent supplier of IGW25T120FKSA1 IGBT Transistors across the USA, India, Europe, Australia, and various other global locations. IGW25T120FKSA1 IGBT Transistors are a product manufactured by Infineon. We provide cost-effective solutions for IGBT Transistors, ensuring timely deliveries around the world.

IGW25T120FKSA1 Infineon

IGW25T120FKSA1 electronic component of Infineon
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Part No.IGW25T120FKSA1
Manufacturer: Infineon
Category: IGBT Transistors
Description: Trans IGBT Chip N-CH 1.2KV 50A 3-Pin(3+Tab) TO-247
Datasheet: IGW25T120FKSA1 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
3: USD 4.4187 ea
Line Total: USD 13.26 
Availability - 18
Ship by Tue. 03 Dec to Mon. 09 Dec
MOQ: 3  Multiples: 1
Pack Size: 1
Availability Price Quantity
18
Ship by Tue. 03 Dec to Mon. 09 Dec
MOQ : 1
Multiples : 1
1 : USD 4.4187
10 : USD 4.0534
25 : USD 3.913
50 : USD 3.7492
100 : USD 3.4931
480 : USD 3.4177
720 : USD 3.3345

2560
Ship by Tue. 03 Dec to Mon. 09 Dec
MOQ : 240
Multiples : 240
240 : USD 3.7106

1221
Ship by Tue. 03 Dec to Mon. 09 Dec
MOQ : 119
Multiples : 1
119 : USD 4.1275
500 : USD 3.9488
1000 : USD 3.7375

931
Ship by Tue. 03 Dec to Mon. 09 Dec
MOQ : 119
Multiples : 1
119 : USD 4.1275
500 : USD 3.9488
1000 : USD 3.7375

465
Ship by Tue. 03 Dec to Mon. 09 Dec
MOQ : 119
Multiples : 1
119 : USD 4.1275
500 : USD 3.9488
1000 : USD 3.7375

232
Ship by Tue. 03 Dec to Mon. 09 Dec
MOQ : 8
Multiples : 1
8 : USD 5.2975
10 : USD 4.8587
50 : USD 4.3062
100 : USD 4.0462
200 : USD 4.03

954
Ship by Tue. 03 Dec to Mon. 09 Dec
MOQ : 119
Multiples : 1
119 : USD 4.1275
500 : USD 3.9488
1000 : USD 3.7375

18
Ship by Tue. 03 Dec to Mon. 09 Dec
MOQ : 3
Multiples : 1
3 : USD 4.4187
10 : USD 4.0534
25 : USD 3.913
50 : USD 3.7492
100 : USD 3.4931
480 : USD 3.4177
720 : USD 3.3345

   
Manufacturer
Product Category
Packaging
Brand
Dc Collector Current
Collector Emitter Saturation Voltage Vceon
Power Dissipation Pd
Collector Emitter Voltage Vbrceo
Transistor Case Style
No. Of Pins
Operating Temperature Max
Svhc
Operating Temperature Min
Operating Temperature Range
Power Dissipation Max
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We are delighted to provide the IGW25T120FKSA1 from our IGBT Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the IGW25T120FKSA1 and other electronic components in the IGBT Transistors category and beyond.

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Dis crete I GBT Expl a na ti o n o f d is cr e te I GB Ts d at ash e ets Application Note About this document Scope and purpose This application note is intended to provide an explanation of the parameters and diagrams given in the datasheet of Infineon discrete IGBTs. The designer of power electronic systems requiring an IGBT will be provided with background information to be able to use the datasheet in the proper way. The following information is given as a hint for the utilization of the IGBT device and shall not be regarded as a description or warranty of a certain functionality, condition or quality of the device. Table of contents 1 Introduction ............................................................................................................... 2 1.1 Status of datasheets ............................................................................................................................ 2 1.2 Type designation ................................................................................................................................. 3 2 IGBT datasheet parameters .......................................................................................... 5 2.1 Maximum ratings ................................................................................................................................. 5 2.2 Static characteristics ........................................................................................................................... 9 2.3 Dynamic characteristics .................................................................................................................... 13 2.4 Switching characteristics .................................................................................................................. 16 2.5 Other parameters and figures ........................................................................................................... 20 3 Symbols and terms .................................................................................................... 26 4 References ............................................................................................................... 28 Application Note 1 V1.0, 2015-09-18 Explanation of discrete IGBTs datasheets Introduction 1 Introduction Datasheets provide information about products and their parameters, which characterize the products. With this information designers could compare devices from different suppliers. Furthermore, the information indicates the devices limits. Datasheet values describe the devices behavior at different junction temperatures and testing conditions. The dynamic characterization tests, from which the switching losses are extracted, are related to a specific test setup with its individual characteristics. Therefore, these values can deviate from a final user application and between datasheets of older and newer products. The attached diagrams, tables and explanations refer to the IKW40N65H5 rev. 2.1 datasheet published in 2015-05-06 as an example. Table 3 and Table 4 only, refer respectively to IHW20N120R5 rev. 2.1 and IHW15N120E1 rev. 2.1. For the latest version of datasheets please refer to Infineons website www.infineon.com. Infineons IGBT datasheets are normally arranged to contain: A cover page with a short description of part number, IGBT technology and diode in case of DuoPack Summarized features, key parameters, applications as well as basic package information Maximum rated electrical values and IGBT thermal resistance as well as diodes in case of DuoPack Electrical characteristics at room temperature, both static and dynamic parameters Switching characteristics at 25C and 150 or 175C Electrical characteristics diagrams Package drawings Figures of definition for key parameters Revision history 1.1 Status of datasheets There are three different document types available. They correlate to the status of the product development. The datasheet types used are: Target datasheet, a document that contains values that are expected to be achieved. Values from these datasheets are commonly used for initial calculations and approximations. Nevertheless those information and values cannot be guaranteed for the final product thus the design of a power system should only rely on values from the final datasheet. Preliminary datasheet differentiating from a final datasheet in a way that certain data values are still missing, for example the maximum values. These missing values in the preliminary data sheet are marked to be defined (t.b.d). The preliminary datasheet is based on engineering samples, which are very close to final products. Normally the watermark of Draft exists on preliminary datasheets. Final datasheet including all the values, which are missing in the preliminary datasheet. Major changes of IGBT and diode characteristics or changes in datasheet values after the release of the final datasheet are accompanied by a Product Change Note (PCN). Application Note 2 V1.0, 2015-09-180

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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