X-On Electronics has gained recognition as a prominent supplier of IGW30N60TFKSA1 IGBT Transistors across the USA, India, Europe, Australia, and various other global locations. IGW30N60TFKSA1 IGBT Transistors are a product manufactured by Infineon. We provide cost-effective solutions for IGBT Transistors, ensuring timely deliveries around the world.

IGW30N60TFKSA1 Infineon

IGW30N60TFKSA1 electronic component of Infineon
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See Product Specifications
Part No.IGW30N60TFKSA1
Manufacturer: Infineon
Category: IGBT Transistors
Description: Transistor: IGBT; 600V; 30A; 187W; TO247-3
Datasheet: IGW30N60TFKSA1 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
4: USD 1.9019 ea
Line Total: USD 7.61 
Availability - 104
Ship by Tue. 03 Dec to Mon. 09 Dec
MOQ: 4  Multiples: 1
Pack Size: 1
Availability Price Quantity
104
Ship by Tue. 03 Dec to Mon. 09 Dec
MOQ : 1
Multiples : 1
1 : USD 2.4908
30 : USD 2.0748
120 : USD 1.9019
510 : USD 1.8343

228
Ship by Fri. 29 Nov to Tue. 03 Dec
MOQ : 1
Multiples : 1
1 : USD 3.752
3 : USD 3.374
7 : USD 2.562
18 : USD 2.422

1377
Ship by Tue. 03 Dec to Mon. 09 Dec
MOQ : 13
Multiples : 1
13 : USD 3.1363
50 : USD 2.015
100 : USD 1.9987

104
Ship by Tue. 03 Dec to Mon. 09 Dec
MOQ : 4
Multiples : 1
4 : USD 1.9019
510 : USD 1.8343

   
Manufacturer
Product Category
Power Dissipation
Mounting
Case
Kind Of Package
Type Of Transistor
Collector-Emitter Voltage
Collector Current
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We are delighted to provide the IGW30N60TFKSA1 from our IGBT Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the IGW30N60TFKSA1 and other electronic components in the IGBT Transistors category and beyond.

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IGW30N60T TRENCHSTOP Series Low Loss IGBT : IGBT in TRENCHSTOP and Fieldstop technology Features: C Very low V 1.5V (typ.) CE(sat) Maximum Junction Temperature 175C Short circuit withstand time 5 s G Designed for : E - Frequency Converters - Uninterruptible Power Supply TRENCHSTOP and Fieldstop technology for 600V applications offers : - very tight parameter distribution PG-TO247-3 - high ruggedness, temperature stable behavior - very high switching speed Positive temperature coefficient in V CE(sat) Low EMI Low Gate Charge 1 Qualified according to JEDEC for target applications Pb-free lead plating RoHS compliant Complete product spectrum and PSpice Models : IGW30N60T TRENCHSTOP Series Thermal Resistance Parameter Symbol Conditions Max. Value Unit Characteristic 0.80 IGBT thermal resistance, R K/W t h J C junction case Thermal resistance, R 40 t h J A junction ambient Electrical Characteristic, at T = 25 C, unless otherwise specified j Value Parameter Symbol Conditions Unit min. typ. max. Static Characteristic Collector-emitter breakdown voltage V V =0V, I =0.2mA 600 - - V ( B R ) C E S GE C Collector-emitter saturation voltage V V = 15V, I =30A C E ( s a t ) GE C T =25 C - 1.5 2.05 j - 1.9 - T =175 C j Gate-emitter threshold voltage V I =0.43mA, 4.1 4.9 5.7 G E ( t h) C V =V CE GE Zero gate voltage collector current I V =600V, A C E S CE V =0V GE T =25 C j - - 40 T =175 C j - - 2000 Gate-emitter leakage current I V =0V,V =20V - - 100 nA G E S CE GE Transconductance g V =20V, I =30A - 16.7 - S fs CE C Integrated gate resistor R - G i n t Dynamic Characteristic Input capacitance C V =25V, - 1630 - pF i s s CE Output capacitance C V =0V, - 108 - GE o s s f=1MHz Reverse transfer capacitance C - 50 - r s s Gate charge Q V =480V, I =30A - 167 - nC G a t e CC C V =15V GE Internal emitter inductance L PG-TO-220-3-1 - 7 - nH E measured 5mm (0.197 in.) from case PG-TO-247-3-21 - 13 - 1) Short circuit collector current I - 275 - A V =15V,t 5 s C ( S C ) GE SC V = 400V, C C T = 150 C j 1) Allowed number of short circuits: <1000 time between short circuits: >1s. 2 Rev. 2.8 19.05.2015 IFAG IPC TD VLS

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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