IGW40T120 TrenchStop Series Low Loss IGBT in TrenchStop and Fieldstop technology C Short circuit withstand time 10 s G Designed for : E - Frequency Converters - Uninterrupted Power Supply TrenchStop and Fieldstop technology for 1200 V applications offers : - very tight parameter distribution - high ruggedness, temperature stable behavior NPT technology offers easy parallel switching capability due to positive temperature coefficient in V CE(sat) Low EMI PG-TO-247-3 Low Gate Charge 1 Qualified according to JEDEC for target applications Pb-free lead plating RoHS compliant Complete product spectrum and PSpice Models : IGW40T120 TrenchStop Series Thermal Resistance Parameter Symbol Conditions Max. Value Unit Characteristic IGBT thermal resistance, R 0.45 K/W t h J C junction case Thermal resistance, R 40 t h J A junction ambient Electrical Characteristic, at T = 25 C, unless otherwise specified j Value Parameter Symbol Conditions Unit min. typ. max. Static Characteristic Collector-emitter breakdown voltage V V =0V, I =1.5mA 1200 - - V ( B R ) C E S G E C Collector-emitter saturation voltage V V = 15V, I =40A C E ( s a t ) G E C - 1.7 2.3 T =25 C j - 2.1 - T =125 C j - 2.3 - T =150 C j Gate-emitter threshold voltage V I =1.5mA,V =V 5.0 5.8 6.5 G E ( t h) C C E G E Zero gate voltage collector current I V =1200V, mA C E S C E V =0V G E T =25 C j - - 0.4 T =150 C j - - 4.0 Gate-emitter leakage current I V =0V,V =20V - - 600 nA G E S C E G E Transconductance g V =20V, I =40A - 21 - S f s C E C Integrated gate resistor R 6 G i n t 2 Rev. 2.4 Nov. 09 Power Semiconductors