X-On Electronics has gained recognition as a prominent supplier of IGW50N60T IGBT Transistors across the USA, India, Europe, Australia, and various other global locations. IGW50N60T IGBT Transistors are a product manufactured by Infineon. We provide cost-effective solutions for IGBT Transistors, ensuring timely deliveries around the world.

IGW50N60T Infineon

IGW50N60T electronic component of Infineon
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See Product Specifications
Part No.IGW50N60T
Manufacturer: Infineon
Category: IGBT Transistors
Description: Transistor: IGBT; 600V; 64A; 333W; TO247-3
Datasheet: IGW50N60T Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 3.905 ea
Line Total: USD 3.9 
Availability - 152
Ship by Fri. 29 Nov to Tue. 03 Dec
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
18
Ship by Tue. 10 Dec to Fri. 13 Dec
MOQ : 1
Multiples : 1
1 : USD 7.8559

152
Ship by Fri. 29 Nov to Tue. 03 Dec
MOQ : 1
Multiples : 1
1 : USD 3.905
10 : USD 3.322
25 : USD 3.19
100 : USD 2.805
240 : USD 2.651
480 : USD 2.53
1200 : USD 2.222
2640 : USD 2.222
5040 : USD 2.134

2
Ship by Fri. 29 Nov to Tue. 03 Dec
MOQ : 1
Multiples : 1
1 : USD 5.39
4 : USD 4.326
11 : USD 4.088
30 : USD 4.004
120 : USD 3.92

   
Manufacturer
Product Category
Power Dissipation
Technology
Technology
Case
Mounting
Kind Of Package
Type Of Transistor
Pulsed Collector Current
Collector-Emitter Voltage
Collector Current
Gate-Emitter Voltage
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the IGW50N60T from our IGBT Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the IGW50N60T and other electronic components in the IGBT Transistors category and beyond.

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IGW50N60T TRENCHSTOP Series Low Loss IGBT : IGBT in TRENCHSTOP and Fieldstop technology C Features: Very low V 1.5V (typ.) CE(sat) Maximum Junction Temperature 175C G Short circuit withstand time 5 s E Designed for : - Frequency Converters - Uninterrupted Power Supply TRENCHSTOP and Fieldstop technology for 600V applications offers : - very tight parameter distribution PG-TO247-3 - high ruggedness, temperature stable behavior - very high switching speed - low V CE(sat) Positive temperature coefficient in V CE(sat) Low EMI Low Gate Charge 1 Qualified according to JEDEC for target applications Pb-free lead plating RoHS compliant Complete product spectrum and PSpice Models : IGW50N60T TRENCHSTOP Series Thermal Resistance Parameter Symbol Conditions Max. Value Unit Characteristic IGBT thermal resistance, R 0.45 K/W t h J C junction case Thermal resistance, R 40 t h J A junction ambient Electrical Characteristic, at T = 25 C, unless otherwise specified j Value Parameter Symbol Conditions Unit min. Typ. max. Static Characteristic Collector-emitter breakdown voltage V V =0V, I =0.2mA 600 - - V ( B R ) C E S GE C Collector-emitter saturation voltage V V = 15V, I =50A C E ( s a t ) GE C T =25 C - 1.5 2.0 j - 1.9 - T =175 C j Gate-emitter threshold voltage V I =0.8mA,V =V 4.1 4.9 5.7 G E ( t h) C CE GE Zero gate voltage collector current I V =600V, A C E S CE V =0V GE T =25 C j - - 40 T =175 C j - - 3500 Gate-emitter leakage current I V =0V,V =20V - - 100 nA G E S CE GE Transconductance g V =20V, I =50A - 31 - S fs CE C Integrated gate resistor R - G i n t Dynamic Characteristic Input capacitance C V =25V, - 3140 - pF i s s CE V =0V, Output capacitance C - 200 - o s s GE f=1MHz Reverse transfer capacitance C - 93 - r s s Gate charge Q V =480V, I =50A - 310 - nC G a t e CC C V =15V GE Internal emitter inductance L PG-TO-220-3-1 - 7 - nH E measured 5mm (0.197 in.) from case PG-TO-247-3-21 - 13 - 1) Short circuit collector current I V =15V,t 5 s - 458.3 - A C ( S C ) GE SC V = 400V, C C T 150 C j 1) Allowed number of short circuits: <1000 time between short circuits: >1s. 2 Rev. 2.8 19.05.2015 IFAG IPC TD VLS

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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