X-On Electronics has gained recognition as a prominent supplier of IGW60T120FKSA1 IGBT Transistors across the USA, India, Europe, Australia, and various other global locations. IGW60T120FKSA1 IGBT Transistors are a product manufactured by Infineon. We provide cost-effective solutions for IGBT Transistors, ensuring timely deliveries around the world.

IGW60T120FKSA1 Infineon

IGW60T120FKSA1 electronic component of Infineon
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Part No.IGW60T120FKSA1
Manufacturer: Infineon
Category: IGBT Transistors
Description: Infineon Technologies IGBT Transistors LOW LOSS IGBT TECH 1200V 60A
Datasheet: IGW60T120FKSA1 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 4.378 ea
Line Total: USD 4.38 
Availability - 444
Ship by Thu. 28 Nov to Mon. 02 Dec
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
444
Ship by Thu. 28 Nov to Mon. 02 Dec
MOQ : 1
Multiples : 1
1 : USD 4.378
10 : USD 4.334
25 : USD 4.169
240 : USD 4.158
2640 : USD 4.059
5040 : USD 4.026

167
Ship by Mon. 02 Dec to Fri. 06 Dec
MOQ : 73
Multiples : 1
73 : USD 6.7113
100 : USD 6.435
500 : USD 6.1588
1000 : USD 5.8175

198
Ship by Mon. 02 Dec to Fri. 06 Dec
MOQ : 73
Multiples : 1
73 : USD 6.7113
100 : USD 6.435
500 : USD 6.1588
1000 : USD 5.8175

34
Ship by Mon. 02 Dec to Fri. 06 Dec
MOQ : 2
Multiples : 1
2 : USD 5.2585

46653
Ship by Mon. 02 Dec to Fri. 06 Dec
MOQ : 73
Multiples : 1
73 : USD 6.7113
100 : USD 6.435
500 : USD 6.1588
1000 : USD 5.8175

20
Ship by Mon. 02 Dec to Fri. 06 Dec
MOQ : 7
Multiples : 1
7 : USD 5.8988
10 : USD 5.8662

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Configuration
Collector- Emitter Voltage VCEO Max
Collector-Emitter Saturation Voltage
Maximum Gate Emitter Voltage
Continuous Collector Current at 25 C
Gate-Emitter Leakage Current
Package / Case
Packaging
Technology
Mounting Style
Technology
Pd - Power Dissipation
Minimum Operating Temperature
Maximum Operating Temperature
Series
Brand
Cnhts
Hts Code
Mxhts
Product Type
Factory Pack Quantity :
Subcategory
Taric
Tradename
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the IGW60T120FKSA1 from our IGBT Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the IGW60T120FKSA1 and other electronic components in the IGBT Transistors category and beyond.

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IGW60T120 TrenchStop Series Low Loss IGBT in TrenchStop and Fieldstop technology C Best in class TO247 Short circuit withstand time 10s G Designed for : E - Frequency Converters - Uninterrupted Power Supply TrenchStop and Fieldstop technology for 1200 V applications offers : - very tight parameter distribution - high ruggedness, temperature stable behavior NPT technology offers easy parallel switching capability due to positive temperature coefficient in V PG-TO-247-3 CE(sat) Low EMI Low Gate Charge 1 Qualified according to JEDEC for target applications Pb-free lead plating RoHS compliant Complete product spectrum and PSpice Models : IGW60T120 TrenchStop Series Thermal Resistance Parameter Symbol Conditions Max. Value Unit Characteristic IGBT thermal resistance, R 0.33 K/W thJC junction case Thermal resistance, R 40 thJA junction ambient Electrical Characteristic, at T = 25 C, unless otherwise specified j Value Parameter Symbol Conditions Unit min. typ. max. Static Characteristic Collector-emitter breakdown voltage V V =0V, I =3.0mA 1200 - - V (BR)CES GE C Collector-emitter saturation voltage V V = 15V, I =60A CE(sat) GE C - 1.9 2.4 T =25C j - 2.1 - T =125C j - 2.3 - T =150C j Gate-emitter threshold voltage V I =2.0mA,V =V 5.0 5.8 6.5 GE(th) C CE GE Zero gate voltage collector current I V =1200V, mA CES CE V =0V GE T =25C j - - 0.6 T =150C j - - 6.0 Gate-emitter leakage current I V =0V,V =20V - - 600 nA GES CE GE Transconductance g V =20V, I =60A - 30 - S fs CE C Integrated gate resistor R 4 Gint Dynamic Characteristic Input capacitance C - V =25V, 3700 - pF iss CE Output capacitance C -V =0V, 180 - GE oss f=1MHz Reverse transfer capacitance C - 150 - rss Gate charge Q V =960V, I =60A - 280 - nC Gate CC C V =15V GE Internal emitter inductance L - 13 - nH E measured 5mm (0.197 in.) from case 1) Short circuit collector current I V =15V,t 10s - 300 - A C(SC) GE SC V = 600V, CC T = 25C j 1) Allowed number of short circuits: <1000 time between short circuits: >1s. 2 Rev. 2.4 Nov. 09 Power Semiconductors

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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