X-On Electronics has gained recognition as a prominent supplier of IHW20N120R3 IGBT Transistors across the USA, India, Europe, Australia, and various other global locations. IHW20N120R3 IGBT Transistors are a product manufactured by Infineon. We provide cost-effective solutions for IGBT Transistors, ensuring timely deliveries around the world.

IHW20N120R3 Infineon

Name: IHW20N120R3
Brand: Infineon
SKU: IHW20N120R3_Infineon
Availability: OutOfStock
Rating: 5 (11 reviews)

IHW20N120R3 electronic component of Infineon

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See Product Specifications

Part No.	IHW20N120R3
Manufacturer:	Infineon
Category:	IGBT Transistors
Description:	IGBT Transistors IH SeriesRev Conduct IGBT Monolithic Body
Datasheet:	IHW20N120R3 Datasheet (PDF)
	Large This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

N/A

Obsolete

IHW20N120R3 More Buying Options & Price Grid(s)

Availability	Price	Quantity
0 MOQ : 1 Multiples : 1	1 : USD 3.4373 10 : USD 3.0455 30 : USD 2.7988 100 : USD 2.5468 500 : USD 2.4346 1000 : USD 2.3849	N/A Obsolete

0 MOQ : 1 Multiples : 1	1 : USD 6.982 10 : USD 4.3092 100 : USD 3.7422 250 : USD 3.5532 500 : USD 3.1878	N/A Obsolete

0 MOQ : 26 Multiples : 1	26 : USD 4.3769	N/A Obsolete

0 MOQ : 18 Multiples : 18	18 : USD 4.0502	N/A Obsolete

We are delighted to provide the IHW20N120R3 from our IGBT Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the IHW20N120R3 and other electronic components in the IGBT Transistors category and beyond.

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Additional Infomation About Product

Resonant Switching Series Reverse conducting IGBT with monolithic body diode IHW20N120R3 Data sheet Industrial Power ControlIHW20N120R3 Resonant Switching Series Reverse conducting IGBT with monolithic body diode C Features: Powerful monolithic body diode with low forward voltage designed for soft commutation only TM TRENCHSTOP technology applications offers: - very tight parameter distribution G - high ruggedness, temperature stable behavior E - low V CEsat - easy parallel switching capability due to positive temperature coefficient in V CEsat Low EMI Qualified according to JEDEC for target applications Pb-free lead plating RoHS compliant Complete product spectrum and PSpice Models:

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

CYP may also be referenced as

Cypress
Cypress / Spansion
CYPRESS SEMI
Cypress Semicon
Cypress Semiconductor
Cypress Semiconductor Corp
INF
INFINEON
Infineon IR
INFINEON (CYPRESS)
Infineon (IRF)
Infineon / Cypress
Infineon / IR
INFINEON TECH ICs
Infineon Technologies
INFINEON TECHNOLOGIES AG
Infineon Technologies Americas Corp.
Infinite Power Solutions
INTERNATIONAL RECTIF
INTERNATIONAL RECTIFIER
International Rectifier HiRel Products
INTL RECTIFIER
IR
IRH
Ramtron
Ramtron / Cypress Semiconductor
Ramtron International Corp
SP9
SPANSION

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Manufacturer Infineon Infineon
Product Category IGBT Transistors IGBT Transistors
RoHS - XON Y Y
Configuration Single Single
Collector- Emitter Voltage VCEO Max 1200 V 1200 V
Collector-Emitter Saturation Voltage 1.48 V 1.48 V
Maximum Gate Emitter Voltage 6.4 V 6.4 V
Continuous Collector Current at 25 C 40 A 40 A
Gate-Emitter Leakage Current 100 nA 100 nA
Power Dissipation 310 W 310 W
Package / Case TO 247 - 3 TO 247 - 3
Packaging Tube Tube
Technology Si Si
Mounting Style Through Hole Through Hole
Technology Si Si
Pd - Power Dissipation 310 W 310 W
Minimum Operating Temperature - 40 C - 40 C
Maximum Operating Temperature + 175 C + 175 C
Series Ihw20n120 Ihw20n120
Brand Infineon Technologies Infineon Technologies
Factory Pack Quantity : 240 240
Cnhts 8541210000 8541210000
Hts Code 8541290095 8541290095
Mxhts 85412999 85412999
Product Type Igbt Transistors Igbt Transistors
Subcategory Igbts Igbts
Taric 8541290000 8541290000
Tradename Trenchstop Trenchstop
Category Igbt Transistors Igbt Transistors
Brand Category Infineon Infineon