IHW30N100T
Soft Switching Series q
Low Loss DuoPack : IGBT in TrenchStop and Fieldstop technology
with anti-parallel diode
Features:
C
1.1V Forward voltage of antiparallel rectifier diode
Specified for T = 175C
Jmax
TrenchStop and Fieldstop technology for 1000 V applications
G
E
offers :
- very tight parameter distribution
- high ruggedness, temperature stable behavior
- easy parallel switching capability due to positive
temperature coefficient in V
CE(sat)
PG-TO-247-3
Low EMI
1
Qualified according to JEDEC for target applications
Application specific optimisation of inverse diode
Pb-free lead plating; RoHS compliant
Applications:
Microwave Oven
Soft Switching Applications
Type V I V T Marking Package
CE C CE(sat),Tj=25C j,max
IHW30N100T 1000V 30A 1.55V H30T100 PG-TO-247-3
175C
Maximum Ratings
Parameter Symbol Value Unit
Collector-emitter voltage V 1000 V
CE
DC collector current I A
C
60
T = 25C
C
30
T = 100C
C
Pulsed collector current, t limited by T I 90
p jmax Cpuls
- 90
Turn off safe operating area V 1000V, T 175C
CE j
Diode forward current I
F
22
T = 25C
C
12
T = 100C
C
Diode pulsed current, t limited by T I 36
p jmax Fpuls
Gate-emitter voltage V V
20
GE
Transient Gate-emitter voltage (t < 5 ms)
p 25
P 412 W
Power dissipation, T = 25C
tot
C
Operating junction temperature T -40...+175
C
j
Storage temperature T -55...+175
stg C
Soldering temperature, 1.6mm (0.063 in.) from case for 10s - 260
1
J-STD-020 and JESD-022
1 Rev. 2.7 Nov 08
Power Semiconductors
IHW30N100T
Soft Switching Series q
Thermal Resistance
Parameter Symbol Conditions Max. Value Unit
Characteristic
IGBT thermal resistance, R 0.36 K/W
thJC
junction case
Diode thermal resistance, R 1.1
thJCD
junction case
Thermal resistance, R 40
thJA
junction ambient
Electrical Characteristic, at T = 25 C, unless otherwise specified
j
Value
Parameter Symbol Conditions Unit
min. Typ. max.
Static Characteristic
Collector-emitter breakdown voltage V 1000 - - V
(BR)CES V =0V, I =500A
GE C
Collector-emitter saturation voltage V V = 15V, I =30A
CE(sat) GE C
1.3 1.55 1.7
T =25C
j
- 1.7 -
T =150C
j
- 1.8 -
T =175C
j
Diode forward voltage V V =0V, I =10A
F GE F
=25C - 1.1 1.3
T
j
- 1.0 -
T =150C
j
- 1.0 -
T =175C
j
Gate-emitter threshold voltage V 5.1 5.8 6.4
I =700A,V =V
GE(th) C CE GE
Zero gate voltage collector current I V =1000V, A
CES CE
V =0V
GE
=25C
T
j
- - 5
T =175C
j
- - 2500
Gate-emitter leakage current I V =0V,V =20V - - 600 nA
GES CE GE
Transconductance g V =20V, I =30A - 28 - S
fs CE C
Dynamic Characteristic
Input capacitance C - V =25V, 3573 - pF
iss CE
V =0V,
Output capacitance C - 98 -
oss GE
f=1MHz
Reverse transfer capacitance C - 76 -
rss
Gate charge Q V =800V, I =30A - 217 - nC
Gate CC C
V =15V
GE
Internal emitter inductance L - 13 - nH
E
measured 5mm (0.197 in.) from case
2 Rev. 2.7 Nov 08
Power Semiconductors