IHW30N60T Soft Switching Series q Low Loss DuoPack : IGBT in TRENCHSTOP technology with optimised diode Features: C Very low V 1.5V (typ.) CE(sat) Maximum Junction Temperature 175C Short circuit withstand time 5 s TRENCHSTOP and Fieldstop technology for 600V applications offers : G - very tight parameter distribution E - high ruggedness, temperature stable behavior - low V CE(sat) Positive temperature coefficient in V CE(sat) Low EMI Low Gate Charge 1 Qualified according to JEDEC for target applications PG-TO247-3 Pb-free lead plating RoHS compliant Complete product spectrum and PSpice Models : IHW30N60T Soft Switching Series q Thermal Resistance Parameter Symbol Conditions Max. Value Unit Characteristic 0.8 IGBT thermal resistance, R K/W t h J C junction case 1.1 Diode thermal resistance, R t h J C D junction case Thermal resistance, R 40 t h J A junction ambient Electrical Characteristic, at T = 25 C, unless otherwise specified j Value Parameter Symbol Conditions Unit min. Typ. max. Static Characteristic V V =0V, I =0.5mA Collector-emitter breakdown voltage 600 - - V ( B R ) C E S G E C V V = 15V, I =30A Collector-emitter saturation voltage C E ( s a t ) G E C - 1.5 2 T =25 C j - 1.9 - T =175 C j Diode forward voltage V V =0V, I =10A F G E F T =25 C - 1.1 1.3 j - 1.0 - T =150 C j - 1.0 - T =175 C j Gate-emitter threshold voltage V I =0.43mA, 4.1 4.9 5.7 G E ( t h) C V =V C E G E Zero gate voltage collector current I V =600V, A C E S C E V =0V G E - - 40 T =25 C j - - 3000 T =175 C j Gate-emitter leakage current I V =0V,V =20V - - 100 nA G E S C E G E Transconductance g V =20V, I =30A - 16.7 - S f s C E C Integrated gate resistor R - G i n t Dynamic Characteristic Input capacitance C V =25V, - 1630 - pF i s s C E V =0V, Output capacitance C - 108 - o s s G E f=1MHz Reverse transfer capacitance C - 50 - r s s Gate charge Q V =480V, I =30A - 167 - nC G a t e C C C V =15V G E Internal emitter inductance L - 13 - nH E measured 5mm (0.197 in.) from case 1) Short circuit collector current I V =15V,t 5 s - 275 - A C ( S C ) G E S C V = 400V, C C T = 150 C j 1) Allowed number of short circuits: <1000 time between short circuits: >1s. 2 Rev. 2.3 20.09.2013 IFAG IPC TD VLS