IHW30N90T Soft Switching Series q Low Loss DuoPack : IGBT in TrenchStop and Fieldstop technology with anti-parallel diode Features: C 1.1V Forward voltage of antiparallel diode TrenchStop and Fieldstop technology for 900 V applications offers : G - very tight parameter distribution E - high ruggedness, temperature stable behavior - easy parallel switching capability due to positive temperature coefficient in V CE(sat) Low EMI 1 PG-TO-247-3 Qualified according to JEDEC for target applications Application specific optimisation of inverse diode Pb-free lead plating RoHS compliant Applications: Microwave Oven Soft Switching Applications for ZCS Type V I V T Marking Package CE C CE(sat),Tj=25C j,max IHW30N90T 900V 30A 1.5V H30T90 PG-TO-247-3 175C Maximum Ratings Parameter Symbol Value Unit Collector-emitter voltage V 900 V CE DC collector current I A C 60 T = 25C C 30 T = 100C C Pulsed collector current, t limited by T I 90 p jmax Cpuls - 90 Turn off safe operating area V 900V, T 175C CE j Diode forward current I F 23 T = 25C C 13 = 100C T C Diode pulsed current, t limited by T I 36 p jmax Fpuls Gate-emitter voltage V 20 V GE Transient Gate-emitter voltage (t < 5 ms) p 25 Power dissipation, T = 25C P 428 W tot C Operating junction temperature T -40...+175 C j Storage temperature T -55...+175 C stg Soldering temperature, 1.6mm (0.063 in.) from case for 10s - 260 1 J-STD-020 and JESD-022 1 Rev. 2.3 Nov 08 Power Semiconductors IHW30N90T Soft Switching Series q Thermal Resistance Parameter Symbol Conditions Max. Value Unit Characteristic IGBT thermal resistance, R 0.35 K/W thJC junction case Diode thermal resistance, R 1.1 thJCD junction case Thermal resistance, R 40 thJA junction ambient Electrical Characteristic, at T = 25 C, unless otherwise specified j Value Parameter Symbol Conditions Unit min. Typ. max. Static Characteristic Collector-emitter breakdown voltage V 900 - - V V =0V, I =500A (BR)CES GE C Collector-emitter saturation voltage V V = 15V, I =30A CE(sat) GE C T =25C - 1.5 1.7 j - 1.7 - T =150C j - 1.8 - T =175C j Diode forward voltage V V =0V, I =10A F GE F - 1.1 1.3 T =25C j - 1.0 - T =150C j - 1.0 - T =175C j Gate-emitter threshold voltage V I =150A,V =V 4.6 5.3 6 GE(th) C CE GE Zero gate voltage collector current I V =900V, A CES CE V =0V GE T =25C j - - 250 T =150C j - - 2500 Gate-emitter leakage current I V =0V,V =20V - - 600 nA GES CE GE Transconductance g V =20V, I =20A - 26 - S fs CE C Dynamic Characteristic Input capacitance C - V =25V, 2617 - pF iss CE Output capacitance C - V =0V, 96 - GE oss f=1MHz Reverse transfer capacitance C - 38 - rss Gate charge Q V =720V, I =30A - 280 - nC Gate CC C V =15V GE Internal emitter inductance L - 13 - nH E measured 5mm (0.197 in.) from case 2 Rev. 2.3 Nov 08 Power Semiconductors