X-On Electronics has gained recognition as a prominent supplier of IHW40N65R5XKSA1 IGBT Transistors across the USA, India, Europe, Australia, and various other global locations. IHW40N65R5XKSA1 IGBT Transistors are a product manufactured by Infineon. We provide cost-effective solutions for IGBT Transistors, ensuring timely deliveries around the world.

IHW40N65R5XKSA1 Infineon

IHW40N65R5XKSA1 electronic component of Infineon
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Part No.IHW40N65R5XKSA1
Manufacturer: Infineon
Category: IGBT Transistors
Description: IGBT Transistors IGBT PRODUCTS
Datasheet: IHW40N65R5XKSA1 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 3.9208 ea
Line Total: USD 3.92 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
9
Ship by Tue. 10 Dec to Fri. 13 Dec
MOQ : 1
Multiples : 1
1 : USD 4.2839

   
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We are delighted to provide the IHW40N65R5XKSA1 from our IGBT Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the IHW40N65R5XKSA1 and other electronic components in the IGBT Transistors category and beyond.

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Resonant Switching Series Reverse conducting IGBT with monolithic body diode IHW40N65R5 Data sheet Industrial Power ControlIHW40N65R5 Resonant Switching Series Reverse-Conducting IGBT with monolithic body diode C Features: Powerful monolithic reverse-conducting diode with low forward voltage TM TRENCHSTOP technology offers: - very tight parameter distribution G - high ruggedness and stable temperature behavior E - very low V and low E CEsat off - easy parallel switching capability due to positive temperature coefficient in V CEsat Low EMI Qualified according to JESD-022 for target applications Pb-free lead plating RoHS compliant Complete product spectrum and PSpice Models:

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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