IHW40T120 Soft Switching Series Low Loss DuoPack : IGBT in TrenchStop and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode C Short circuit withstand time 10 s Designed for : - Soft Switching Applications G E - Induction Heating TrenchStop and Fieldstop technology for 1200 V applications offers : - very tight parameter distribution - high ruggedness, temperature stable behavior PG-TO-247-3 - easy parallel switching capability due to positive temperature coefficient in V CE(sat) Very soft, fast recovery anti-parallel EmCon HE diode Low EMI 1 Qualified according to JEDEC for target applications Application specific optimisation of inverse diode Pb-free lead plating RoHS compliant Type V I V T Marking Package CE C CE(sat),Tj=25C j,max IHW40T120 1200V 40A 1.8V H40T120 PG-TO247-3 150C Maximum Ratings Parameter Symbol Value Unit Collector-emitter voltage V 1200 V CE DC collector current I A C 75 T = 25C C 40 T = 100C C Pulsed collector current, t limited by T I 105 p jmax Cpuls Turn off safe operating area - 105 V 1200V, T 150C CE j Diode forward current I F T = 25C 31 C 19.8 T = 100C C Diode pulsed current, t limited by T I 47 p jmax Fpuls Diode surge non repetitive current, t limited by T I A p jmax FSM 78 T = 25C, t = 10ms, sine halfwave C p 200 T = 25C, t 2.5s, sine halfwave C p 160 T = 100C, t 2.5s, sine halfwave C p Gate-emitter voltage V V 20 GE 2) Short circuit withstand time t 10 s SC V = 15V, V 1200V, T 150C GE CC j P 270 W Power dissipation, T = 25C tot C Operating junction temperature T -40...+150 C j Storage temperature T -55...+150 stg 1 J-STD-020 and JESD-022 2) Allowed number of short circuits: <1000 time between short circuits: >1s. 1 Rev. 2.3 Sep 08 Power Semiconductors IHW40T120 Soft Switching Series Soldering temperature, 1.6mm (0.063 in.) from case for 10s - 260 2 Rev. 2.3 Sep 08 Power Semiconductors