X-On Electronics has gained recognition as a prominent supplier of IKA06N60TXKSA1 IGBT Transistors across the USA, India, Europe, Australia, and various other global locations. IKA06N60TXKSA1 IGBT Transistors are a product manufactured by Infineon. We provide cost-effective solutions for IGBT Transistors, ensuring timely deliveries around the world.

IKA06N60TXKSA1 Infineon

IKA06N60TXKSA1 electronic component of Infineon
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Part No.IKA06N60TXKSA1
Manufacturer: Infineon
Category: IGBT Transistors
Description: Transistor: IGBT; 600V; 6.2A; 28W; TO220FP
Datasheet: IKA06N60TXKSA1 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
500: USD 0.9428 ea
Line Total: USD 471.4 
Availability - 485
Ship by Thu. 14 Nov to Wed. 20 Nov
MOQ: 500  Multiples: 500
Pack Size: 500
Availability Price Quantity
892
Ship by Thu. 14 Nov to Wed. 20 Nov
MOQ : 500
Multiples : 500
500 : USD 0.9428
1000 : USD 0.8746
2000 : USD 0.8272

485
Ship by Thu. 14 Nov to Wed. 20 Nov
MOQ : 33
Multiples : 1
33 : USD 1.2659
50 : USD 1.1927
100 : USD 1.1488
200 : USD 1.0952
500 : USD 1.0124

485
Ship by Thu. 14 Nov to Wed. 20 Nov
MOQ : 500
Multiples : 500
500 : USD 0.9428
1000 : USD 0.8746
2000 : USD 0.8272

   
Manufacturer
Product Category
Power Dissipation
Technology
Technology
Case
Kind Of Package
Mounting
Type Of Transistor
Pulsed Collector Current
Turn-On Time
Turn-Off Time
Collector-Emitter Voltage
Collector Current
Gate-Emitter Voltage
Gate Charge
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the IKA06N60TXKSA1 from our IGBT Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the IKA06N60TXKSA1 and other electronic components in the IGBT Transistors category and beyond.

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IKA06N60T TRENCHSTOP Series Low Loss DuoPack : IGBT in TRENCHSTOP and Fieldstop technology with soft, fast recovery anti-parallel Emitter Controlled HE diode Features C Very low V 1.5V (typ.) CE(sat) Maximum Junction Temperature 175C Short circuit withstand time 5s TRENCHSTOP and Fieldstop technology for 600V applications offers : G E - very tight parameter distribution - high ruggedness, temperature stable behavior - very high switching speed Low EMI Very soft, fast recovery anti-parallel Emitter Controlled HE diode 1 Qualified according to JEDEC for target applications Pb-free lead plating RoHS compliant PG-TO220-3 (FullPAK) Complete product spectrum and PSpice Models : IKA06N60T TRENCHSTOP Series Thermal Resistance Parameter Symbol Conditions Max. Value Unit Characteristic IGBT thermal resistance, R 5.3 K/W t h J C junction case R Diode thermal resistance, 6.5 t h J C D junction case Thermal resistance, R 80 t h J A junction ambient Electrical Characteristic, at T = 25 C, unless otherwise specified j Value Parameter Symbol Conditions Unit min. typ. max. Static Characteristic Collector-emitter breakdown voltage V V =0V, 600 - - V ( B R ) C E S GE I =0.25mA C Collector-emitter saturation voltage V V = 15V, I =6A C E ( s a t ) GE C T =25 C - 1.5 2.05 j - 1.8 T =175 C j Diode forward voltage V V =0V, I =6A F GE F - 1.6 2.05 T =25 C j - 1.6 - T =175 C j Gate-emitter threshold voltage V I =0.18mA, 4.1 4.6 5.7 G E ( t h) C V =V CE GE Zero gate voltage collector current I V =600V,V =0V A C E S CE GE - - 40 T =25 C j - - 700 T =175 C j Gate-emitter leakage current I V =0V,V =20V - - 100 nA G E S CE GE Transconductance g V =20V, I =6A - 3.6 - S fs CE C Integrated gate resistor R none G i n t Dynamic Characteristic Input capacitance C V =25V, - 368 - pF i s s CE V =0V, Output capacitance C - 28 - o s s GE f=1MHz Reverse transfer capacitance C - 11 - r s s Gate charge Q V =480V, I =6A - 42 - nC G a t e CC C V =15V GE Internal emitter inductance L - 7 - nH E measured 5mm (0.197 in.) from case 1) Short circuit collector current I V =15V,t 5 s - 55 - A C ( S C ) GE SC V = 400V, C C T = 25 C j 1) Allowed number of short circuits: <1000 time between short circuits: >1s. 2 Rev. 2.5 20.09.2013 IFAG IPC TD VLS

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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