X-On Electronics has gained recognition as a prominent supplier of IKB20N60TATMA1 IGBT Transistors across the USA, India, Europe, Australia, and various other global locations. IKB20N60TATMA1 IGBT Transistors are a product manufactured by Infineon. We provide cost-effective solutions for IGBT Transistors, ensuring timely deliveries around the world.

IKB20N60TATMA1 Infineon

IKB20N60TATMA1 electronic component of Infineon
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Part No.IKB20N60TATMA1
Manufacturer: Infineon
Category: IGBT Transistors
Description: IGBT Transistors INDUSTRY 14
Datasheet: IKB20N60TATMA1 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 3.0448 ea
Line Total: USD 3.04 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 1
Multiples : 1
1 : USD 3.0448
10 : USD 2.5635
100 : USD 2.1622
500 : USD 1.8349
1000 : USD 1.6695

0
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ : 1
Multiples : 1
1 : USD 3.3923
5 : USD 3.0531
8 : USD 2.2253
20 : USD 2.1033

   
Manufacturer
Product Category
Power Dissipation
Technology
Technology
Category
Mounting
Kind Of Package
Collector-Emitter Voltage
Case
Type Of Transistor
Collector Current
Gate Charge
Semiconductor Structure
Gate-Emitter Voltage
Pulsed Collector Current
Turn-Off Time
Turn-On Time
Features Of Semiconductor Devices
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We are delighted to provide the IKB20N60TATMA1 from our IGBT Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the IKB20N60TATMA1 and other electronic components in the IGBT Transistors category and beyond.

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IKB20N60T TRENCHSTOP Series p Low Loss DuoPack : IGBT in TRENCHSTOP and Fieldstop technology with soft, fast recovery anti-parallel Emitter Controlled HE diode Features: C Very low V 1.5V (typ.) CE(sat) Maximum Junction Temperature 175C Short circuit withstand time 5s Designed for frequency inverters for washing machines, fans, pumps and vacuum G cleaners E TRENCHSTOP and Fieldstop technology for 600V applications offers : - very tight parameter distribution - high ruggedness, temperature stable behavior - very high switching speed Positive temperature coefficient in V CE(sat) Low EMI Low Gate Charge 1 Qualified according to JEDEC for target applications Pb-free lead plating RoHS compliant Complete product spectrum and PSpice Models : IKB20N60T TRENCHSTOP Series p Thermal Resistance Parameter Symbol Conditions Max. Value Unit Characteristic IGBT thermal resistance, R 0.9 K/W thJC junction case Diode thermal resistance, R 1.5 t h J C D junction case Thermal resistance, R 6cm Cu 40 t h J A junction ambient Electrical Characteristic, at T = 25 C, unless otherwise specified j Value Parameter Symbol Conditions Unit min. Typ. max. Static Characteristic Collector-emitter breakdown voltage V V =0V, I =0.2mA 600 - - V ( B R ) C E S GE C Collector-emitter saturation voltage V V = 15V, I =20A C E ( s a t ) GE C - 1.5 2.05 T =25 C j - 1.9 - T =175 C j Diode forward voltage V V =0V, I =20A F GE F T =25 C - 1.65 2.05 j - 1.6 - T =175 C j Gate-emitter threshold voltage V I =290A,V =V 4.1 4.9 5.7 G E ( t h) C CE GE Zero gate voltage collector current I V =600V, A C E S CE V =0V GE T =25 C j - - 40 T =175 C j - - 1500 Gate-emitter leakage current I V =0V,V =20V - - 100 nA G E S CE GE Transconductance g V =20V, I =20A - 11 - S fs CE C Integrated gate resistor R - G i n t Dynamic Characteristic Input capacitance C V =25V, - - pF i s s CE 1100 V =0V, Output capacitance C - - o s s GE 71 f=1MHz Reverse transfer capacitance C - - r s s 32 Gate charge Q V =480V, I =20A - 120 - nC G a t e CC C V =15V GE Internal emitter inductance L - 7 - nH E measured 5mm (0.197 in.) from case 1) Short circuit collector current I V =15V,t 5 s - 183.3 - A C ( S C ) GE SC V = 400V, C C T 150 C j 1) Allowed number of short circuits: <1000 time between short circuits: >1s. 2 Rev. 2.7 18.05.2015 IFAG IPC TD VLS

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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