X-On Electronics has gained recognition as a prominent supplier of IKD03N60RFATMA1 IGBT Transistors across the USA, India, Europe, Australia, and various other global locations. IKD03N60RFATMA1 IGBT Transistors are a product manufactured by Infineon. We provide cost-effective solutions for IGBT Transistors, ensuring timely deliveries around the world.

IKD03N60RFATMA1 Infineon

IKD03N60RFATMA1 electronic component of Infineon
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Part No.IKD03N60RFATMA1
Manufacturer: Infineon
Category: IGBT Transistors
Description: IGBT Transistors IGBT w/ INTG DIODE 600V 5A
Datasheet: IKD03N60RFATMA1 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.8874 ea
Line Total: USD 0.89 
Availability - 6
Ship by Tue. 10 Dec to Fri. 13 Dec
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
6
Ship by Tue. 10 Dec to Fri. 13 Dec
MOQ : 1
Multiples : 1
1 : USD 0.8874
10 : USD 0.7722
30 : USD 0.6997
100 : USD 0.6253
500 : USD 0.5643
1000 : USD 0.5496

   
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RoHS - XON
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Collector- Emitter Voltage VCEO Max
Collector-Emitter Saturation Voltage
Maximum Gate Emitter Voltage
Continuous Collector Current at 25 C
Gate-Emitter Leakage Current
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Pd - Power Dissipation
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We are delighted to provide the IKD03N60RFATMA1 from our IGBT Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the IKD03N60RFATMA1 and other electronic components in the IGBT Transistors category and beyond.

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Infineon's IKD03N60RFATMA1 is an Insulated Gate Bipolar Transistor (IGBT) with built-in diode that is rated for 600V 5A. It is particularly suitable for high speed switching applications which require high level of robustness. It features a fast recovery diode with continuous on-state current of 5A and short-circuit withstand time of 13 microseconds. The IGBT can operate in temperatures between -40 and 150 degrees Celsius, and have an average collector-emitter voltage of 600V. It features short-circuit protection, low switching noise, and reduced losses due to the isolated substrate. This makes it suitable for a wide range of industrial applications, such as AC and DC motor drives, welding, UPS, and solar inverters.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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