IKP03N120H2
IKW03N120H2
HighSpeed 2-Technology with soft, fast recovery anti-parallel Emitter Controlled
HE diode
C
Designed for:
- SMPS
- Lamp Ballast
G
E
- ZVS-Converter
nd
2 generation HighSpeed-Technology
for 1200V applications offers:
- loss reduction in resonant circuits
PG-TO-247-3
- temperature stable behavior
- parallel switching capability
- tight parameter distribution
- E optimized for I =3A
off C
PG-TO-220-3-1
2
Qualified according to JEDEC for target applications
Pb-free lead plating; RoHS compliant
Complete product spectrum and PSpice Models : IKP03N120H2
IKW03N120H2
Thermal Resistance
Parameter Symbol Conditions Max. Value Unit
Characteristic
IGBT thermal resistance, R 2.0 K/W
t h J C
junction case
Diode thermal resistance, R 3.2
t h J C D
junction - case
Thermal resistance, R P-TO-220-3-1 62
t h J A
P-TO-247-3-21
junction ambient
Electrical Characteristic, at T = 25 C, unless otherwise specified
j
Value
Parameter Symbol Conditions Unit
min. Typ. max.
Static Characteristic
V
Collector-emitter breakdown voltage V =0V, I =300 A 1200 - - V
( B R ) C E S
G E C
Collector-emitter saturation voltage V V = 15V, I =3A
C E ( s a t ) G E C
T =25 C - 2.2 2.8
j
- 2.5 -
T =150 C
j
V = 10V, I =3A,
G E C
T =25 C
j - 2.4 -
Diode forward voltage V V = 0, I =2A
F G E F
T =25 C - 2.0 2.5
j
- 1.75 -
T =150 C
j
Gate-emitter threshold voltage V I =90 A,V =V 2.1 3 3.9
G E ( t h)
C C E G E
I V =1200V,V =0V
Zero gate voltage collector current A
C E S C E G E
- - 20
T =25 C
j
- - 80
T =150 C
j
Gate-emitter leakage current I V =0V,V =20V - - 100 nA
G E S C E G E
Transconductance g V =20V, I =3A - 2 - S
f s C E C
Dynamic Characteristic
Input capacitance C V =25V, - 205 - pF
i s s C E
V =0V,
Output capacitance C - 24 -
G E
o s s
f=1MHz
Reverse transfer capacitance C - 7 -
r s s
Gate charge Q V =960V, I =3A - 22 - nC
G a t e C C C
V =15V
G E
L
Internal emitter inductance PG-TO-220-3-1 - 7 - nH
E
measured 5mm (0.197 in.) from case PG-TO-247-3-21 - 13 -
2 Rev. 2.6 17.07.2013
Power Semiconductors