IKP04N60T TrenchStop Series q Low Loss DuoPack : IGBT in TrenchStop and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode C Very low V 1.5 V (typ.) CE(sat) Maximum Junction Temperature 175 C Short circuit withstand time 5s G E Designed for : - Frequency Converters - Drives TrenchStop and Fieldstop technology for 600 V applications offers : PG-TO-220-3-1 - very tight parameter distribution - high ruggedness, temperature stable behavior - very high switching speed - low V CE(sat) Positive temperature coefficient in V CE(sat) Low EMI Low Gate Charge Very soft, fast recovery anti-parallel EmCon HE diode 1 Qualified according to JEDEC for target applications Pb-free lead plating RoHS compliant Complete product spectrum and PSpice Models : IKP04N60T TrenchStop Series q Thermal Resistance Parameter Symbol Conditions Max. Value Unit Characteristic IGBT thermal resistance, R 3.5 K/W thJC junction case Diode thermal resistance, R 5 thJCD junction case Thermal resistance, R 62 thJA junction ambient Electrical Characteristic, at T = 25 C, unless otherwise specified j Value Parameter Symbol Conditions Unit min. Typ. max. Static Characteristic V V =0V, I =0.2mA Collector-emitter breakdown voltage 600 - - V (BR)CES GE C V V = 15V, I =4A Collector-emitter saturation voltage CE(sat) GE C - 1.5 2.05 T =25C j - 1.9 - T =175C j Diode forward voltage V V =0V, I =4A F GE F - 1.65 2.05 T =25C j - 1.6 - T =175C j Gate-emitter threshold voltage V I = 60A,V =V 4.1 4.9 5.7 GE(th) C CE GE I V =600V, Zero gate voltage collector current A CES CE V =0V GE T =25C j - - 40 T =175C j - - 1000 Gate-emitter leakage current I V =0V,V =20V - - 100 nA GES CE GE Transconductance g V =20V, I =4A - 2.2 - S fs CE C Integrated gate resistor R - Gint Dynamic Characteristic C V =25V, Input capacitance - 252 - pF iss CE Output capacitance C V =0V, - 20 - GE oss f=1MHz C Reverse transfer capacitance - 7.5 - rss Q V =480V, I =4A Gate charge - 27 - nC Gate CC C V =15V GE Internal emitter inductance L - 7 - nH E measured 5mm (0.197 in.) from case 1) I Short circuit collector current V =15V,t 5s - 36 - A C(SC) GE SC V = 400V, CC T 150C j 1) Allowed number of short circuits: <1000 time between short circuits: >1s. 2 Rev. 2.4 Sep. 07 Power Semiconductors