X-On Electronics has gained recognition as a prominent supplier of IKP06N60TXKSA1 IGBT Transistors across the USA, India, Europe, Australia, and various other global locations. IKP06N60TXKSA1 IGBT Transistors are a product manufactured by Infineon. We provide cost-effective solutions for IGBT Transistors, ensuring timely deliveries around the world.

IKP06N60TXKSA1 Infineon

IKP06N60TXKSA1 electronic component of Infineon
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Part No.IKP06N60TXKSA1
Manufacturer: Infineon
Category: IGBT Transistors
Description: Infineon Technologies IGBT Transistors LOW LOSS DuoPack 600V 6A
Datasheet: IKP06N60TXKSA1 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 1.727 ea
Line Total: USD 1.73 
Availability - 485
Ship by Thu. 28 Nov to Mon. 02 Dec
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
485
Ship by Thu. 28 Nov to Mon. 02 Dec
MOQ : 1
Multiples : 1
1 : USD 1.727
10 : USD 0.9306
100 : USD 0.8536
500 : USD 0.7304
1000 : USD 0.6765
5000 : USD 0.649

431
Ship by Mon. 02 Dec to Fri. 06 Dec
MOQ : 92
Multiples : 1
92 : USD 1.2179
100 : USD 1.1634
250 : USD 1.1167

384
Ship by Mon. 02 Dec to Fri. 06 Dec
MOQ : 9
Multiples : 1
9 : USD 1.0614
100 : USD 0.9936
500 : USD 0.8432
1000 : USD 0.7827
2500 : USD 0.7674
5000 : USD 0.7529

485
Ship by Mon. 02 Dec to Fri. 06 Dec
MOQ : 30
Multiples : 1
30 : USD 1.3878
50 : USD 1.3715
100 : USD 1.2302
200 : USD 1.1732
500 : USD 1.04

5335
Ship by Mon. 02 Dec to Fri. 06 Dec
MOQ : 500
Multiples : 500
500 : USD 0.9892

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Configuration
Collector- Emitter Voltage VCEO Max
Collector-Emitter Saturation Voltage
Maximum Gate Emitter Voltage
Continuous Collector Current at 25 C
Gate-Emitter Leakage Current
Package / Case
Packaging
Technology
Mounting Style
Technology
Pd - Power Dissipation
Minimum Operating Temperature
Maximum Operating Temperature
Series
Brand
Cnhts
Hts Code
Mxhts
Product Type
Factory Pack Quantity :
Subcategory
Taric
Tradename
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the IKP06N60TXKSA1 from our IGBT Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the IKP06N60TXKSA1 and other electronic components in the IGBT Transistors category and beyond.

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IKP06N60T TRENCHSTOP Series p Low Loss DuoPack : IGBT in TRENCHSTOP and Fieldstop technology with soft, fast recovery anti-parallel Emitter Controlled HE diode Features C Very low V 1.5V (typ.) CE(sat) Maximum Junction Temperature 175C Short circuit withstand time 5 s Designed for : G E - Variable Speed Drive for washing machines, air conditioners and induction cooking - Uninterrupted Power Supply TRENCHSTOP and Fieldstop technology for 600V applications offers : - very tight parameter distribution - high ruggedness, temperature stable behaviour Low EMI PG-TO220-3 Very soft, fast recovery anti-parallel Emitter Controlled HE diode 1 Qualified according to JEDEC for target applications Pb-free lead plating RoHS compliant Complete product spectrum and PSpice Models : IKP06N60T TRENCHSTOP Series p Thermal Resistance Parameter Symbol Conditions Max. Value Unit Characteristic IGBT thermal resistance, R 1.7 K/W t h J C junction case Diode thermal resistance, R 2.6 t h J C D junction case Thermal resistance, R 62 t h J A junction ambient Electrical Characteristic, at T = 25 C, unless otherwise specified j Value Parameter Symbol Conditions Unit min. typ. max. Static Characteristic V V =0V, Collector-emitter breakdown voltage 600 - - V ( B R ) C E S G E I =0.25mA C Collector-emitter saturation voltage V V = 15V, I =6A C E ( s a t ) G E C T =25 C - 1.5 2.05 j - 1.8 T =175 C j Diode forward voltage V V =0V, I =6A F G E F - 1.6 2.05 T =25 C j - 1.6 - T =175 C j Gate-emitter threshold voltage V I =0.18mA, 4.1 4.6 5.7 G E ( t h) C V =V C E G E I V =600V, Zero gate voltage collector current A C E S C E V =0V G E T =25 C j - - 40 T =175 C j - - 700 Gate-emitter leakage current I V =0V,V =20V - - 100 nA G E S C E G E Transconductance g V =20V, I =6A - 3.6 - S f s C E C Integrated gate resistor R none G i n t Dynamic Characteristic Input capacitance C V =25V, - 368 - pF i s s C E C V =0V, Output capacitance - 28 - o s s G E f=1MHz C Reverse transfer capacitance - 11 - r s s Gate charge Q V =480V, I =6A - 42 - nC G a t e C C C V =15V G E Internal emitter inductance L - 7 - nH E measured 5mm (0.197 in.) from case 1) I Short circuit collector current V =15V,t 5 s - 55 - A C ( S C ) G E S C V = 400V, C C T = 25 C j 1) Allowed number of short circuits: <1000 time between short circuits: >1s. 2 Rev. 2.5 20.09.2013 IFAG IPC TD VLS

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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