IKW15N120T2 nd TrenchStop 2 generation Series nd Low Loss DuoPack : IGBT in 2 generation TrenchStop technology with soft, fast recovery anti-parallel Emitter Controlled Diode C Short circuit withstand time 10 s Designed for : - Frequency Converters G E - Uninterrupted Power Supply nd TrenchStop 2 generation for 1200 V applications offers : - very tight parameter distribution - high ruggedness, temperature stable behavior Easy paralleling capability due to positive temperature coefficient PG-TO-247-3 in V CE(sat) Low EMI Low Gate Charge Very soft, fast recovery anti-parallel Emitter Controlled HE Diode 1 Qualified according to JEDEC for target applications Pb-free lead plating RoHS compliant Complete product spectrum and PSpice Models : IKW15N120T2 nd TrenchStop 2 generation Series Thermal Resistance Parameter Symbol Conditions Max. Value Unit Characteristic IGBT thermal resistance, R 0.63 K/W t h J C junction case Diode thermal resistance, R 1.12 t h J C D junction case Thermal resistance, R 40 t h J A junction ambient Electrical Characteristic, at T = 25 C, unless otherwise specified j Value Parameter Symbol Conditions Unit min. typ. max. Static Characteristic Collector-emitter breakdown voltage V V =0V, I =500A 1200 - - V ( B R ) C E S GE C V V = 15V, I =15A Collector-emitter saturation voltage C E ( s a t ) GE C - 1.7 2.2 T =25 C j - 2.1 - T =150 C j - 2.2 - T =175 C j Diode forward voltage V V =0V, I =15A F GE F T =25 C - 1.75 2.2 j - 1.8 - T =150 C j - 1.75 - T =175 C j Gate-emitter threshold voltage V I =0.6mA,V =V 5.2 5.8 6.4 G E ( t h) C CE GE Zero gate voltage collector current I V =1200V, mA C E S CE V =0V GE T =25 C j - - 0.4 T =150 C j - - 4.0 T =175 C j - - 20 Gate-emitter leakage current I V =0V,V =20V - - 600 nA G E S CE GE Transconductance g V =20V, I =15A - 8 - S fs CE C 2 Rev. 2.2 12.06.2013 IFAG IPC TD VLS