IKW15T120 TrenchStop Series Low Loss DuoPack : IGBT in TrenchStop and Fieldstop technology with soft, fast recovery anti-parallel Emitter Controlled HE diode C Approx. 1.0V reduced V CE(sat) and 0.5V reduced V compared to BUP313D F Short circuit withstand time 10 s G E Designed for : - Frequency Converters - Uninterrupted Power Supply TrenchStop and Fieldstop technology for 1200 V applications offers : - very tight parameter distribution PG-TO-247-3 - high ruggedness, temperature stable behavior NPT technology offers easy parallel switching capability due to positive temperature coefficient in V CE(sat) Low EMI Low Gate Charge Very soft, fast recovery anti-parallel Emitter Controlled HE diode 1 Qualified according to JEDEC for target applications Pb-free lead plating RoHS compliant Complete product spectrum and PSpice Models : IKW15T120 TrenchStop Series Soldering temperature, 1.6mm (0.063 in.) from case for 10s - 260 Thermal Resistance Parameter Symbol Conditions Max. Value Unit Characteristic IGBT thermal resistance, R 1.1 K/W t h J C junction case Diode thermal resistance, R 1.5 t h J C D junction case Thermal resistance, R 40 t h J A junction ambient Electrical Characteristic, at T = 25 C, unless otherwise specified j Value Parameter Symbol Conditions Unit min. typ. max. Static Characteristic V V =0V, I =0.5mA Collector-emitter breakdown voltage 1200 - - V ( B R ) C E S G E C V V = 15V, I =15A Collector-emitter saturation voltage C E ( s a t ) G E C - 1.7 2.2 T =25 C j - 2.0 - T =125 C j - 2.2 - T =150 C j Diode forward voltage V V =0V, I =15A F G E F T =25 C - 1.7 2.2 j - 1.7 - T =125 C j - 1.7 - T =150 C j Gate-emitter threshold voltage V I =0.6mA,V =V 5.0 5.8 6.5 G E ( t h) C C E G E Zero gate voltage collector current I V =1200V, mA C E S C E V =0V G E T =25 C j - - 0.2 T =150 C j - - 2.0 I V =0V,V =20V Gate-emitter leakage current - - 100 nA G E S C E G E Transconductance g V =20V, I =15A - 10 - S f s C E C R Integrated gate resistor none G i n t 2 Rev. 2.4 12.06.2013 IFAG IPC TD VLS