IKW20N60T TRENCHSTOP Series Low Loss DuoPack : IGBT in TRENCHSTOP and Fieldstop technology with soft, fast recovery anti-parallel Emitter Controlled HE diode C Features: Very low V 1.5V (typ.) CE(sat) Maximum Junction Temperature 175C G Short circuit withstand time 5s E Designed for : - Frequency Converters - Uninterrupted Power Supply TRENCHSTOP and Fieldstop technology for 600V applications offers : - very tight parameter distribution - high ruggedness, temperature stable behavior - very high switching speed PG-TO247-3 - low V CE(sat) Positive temperature coefficient in V CE(sat) Low EMI Low Gate Charge Very soft, fast recovery anti-parallel Emitter Controlled HE diode 1 Qualified according to JEDEC for target applications Pb-free lead plating RoHS compliant Complete product spectrum and PSpice Models : IKW20N60T TRENCHSTOP Series Thermal Resistance Parameter Symbol Conditions Max. Value Unit Characteristic IGBT thermal resistance, R 0.9 t h J C junction case Diode thermal resistance, K/W R 1.5 t h J C D junction case Thermal resistance, R 40 t h J A junction ambient Electrical Characteristic, at T = 25 C, unless otherwise specified j Value Parameter Symbol Conditions Unit min. Typ. max. Static Characteristic Collector-emitter breakdown voltage V V =0V, I =0.2mA 600 - - ( B R ) C E S GE C Collector-emitter saturation voltage V = 15V, I =20A GE C - 1.5 2.05 V T =25 C C E ( s a t ) j - 1.9 - T =175 C j V Diode forward voltage V =0V, I =20A GE F V T =25 C - 1.65 2.05 F j - 1.6 - T =175 C j Gate-emitter threshold voltage V I =290A,V =V 4.1 4.9 5.7 G E ( t h) C CE GE Zero gate voltage collector current V =600V, CE V =0V GE I A C E S T =25 C j - - 40 T =175 C j - - 1500 Gate-emitter leakage current I V =0V,V =20V - - 100 nA G E S CE GE Transconductance g V =20V, I =20A - 11 - S fs CE C Integrated gate resistor R - G i n t Dynamic Characteristic Input capacitance C V =25V, - - i s s CE 1100 V =0V, Output capacitance C - - pF o s s GE 71 f=1MHz Reverse transfer capacitance C - - r s s 32 Gate charge V =480V, I =20A CC C Q - 120 - nC G a t e V =15V GE Internal emitter inductance L PG-TO247-3 - 13 - nH E measured 5mm (0.197 in.) from case 1) Short circuit collector current V =15V,t 5 s GE SC I V = 400V, - 183.3 - A C ( S C ) C C T 150 C j 1) Allowed number of short circuits: <1000 time between short circuits: >1s. 2 Rev. 2.8 18.05.2015 IFAG IPC TD VLS