X-On Electronics has gained recognition as a prominent supplier of IKW25N120H3FKSA1 IGBT Transistors across the USA, India, Europe, Australia, and various other global locations. IKW25N120H3FKSA1 IGBT Transistors are a product manufactured by Infineon. We provide cost-effective solutions for IGBT Transistors, ensuring timely deliveries around the world.

IKW25N120H3FKSA1 Infineon

IKW25N120H3FKSA1 electronic component of Infineon
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Part No.IKW25N120H3FKSA1
Manufacturer: Infineon
Category: IGBT Transistors
Description: Infineon Technologies IGBT Transistors IGBT PRODUCTS
Datasheet: IKW25N120H3FKSA1 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 6.16 ea
Line Total: USD 6.16 
Availability - 391
Ship by Fri. 29 Nov to Tue. 03 Dec
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
232
Ship by Tue. 03 Dec to Mon. 09 Dec
MOQ : 8
Multiples : 1
8 : USD 3.861
20 : USD 3.861
75 : USD 3.861
200 : USD 3.861
750 : USD 3.861

4
Ship by Tue. 10 Dec to Fri. 13 Dec
MOQ : 1
Multiples : 1
1 : USD 6.2264
10 : USD 5.5007
30 : USD 5.0595
90 : USD 4.6884

391
Ship by Fri. 29 Nov to Tue. 03 Dec
MOQ : 1
Multiples : 1
1 : USD 6.16
10 : USD 5.907
25 : USD 3.982
100 : USD 3.487
240 : USD 3.487
480 : USD 3.333

196
Ship by Tue. 03 Dec to Mon. 09 Dec
MOQ : 4
Multiples : 1
4 : USD 10.2212
10 : USD 7.9463
50 : USD 6.565
100 : USD 6.3537
200 : USD 5.265

14677
Ship by Tue. 03 Dec to Mon. 09 Dec
MOQ : 91
Multiples : 1
91 : USD 5.3788
100 : USD 5.1675
500 : USD 4.94
1000 : USD 4.6638

   
Manufacturer
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RoHS - XON
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Collector- Emitter Voltage VCEO Max
Collector-Emitter Saturation Voltage
Maximum Gate Emitter Voltage
Continuous Collector Current at 25 C
Gate-Emitter Leakage Current
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Technology
Mounting Style
Technology
Pd - Power Dissipation
Minimum Operating Temperature
Maximum Operating Temperature
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We are delighted to provide the IKW25N120H3FKSA1 from our IGBT Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the IKW25N120H3FKSA1 and other electronic components in the IGBT Transistors category and beyond.

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IGBT High speed DuoPack: IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel diode IKW25N120H3 1200V high speed switching series third generation Data sheet Industrial Power ControlIKW25N120H3 High speed switching series third generation High speed DuoPack: IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel diode C Features: TM TRENCHSTOP technology offering very low VCEsat low EMI Very soft, fast recovery anti-parallel diode G maximum junction temperature 175C E qualified according to JEDEC for target applications Pb-free lead plating RoHS compliant complete product spectrum and PSpice Models:

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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