IKW30N60T TRENCHSTOP Series q Low Loss DuoPack : IGBT in TRENCHSTOP and Fieldstop technology with soft, fast recovery anti-parallel Emitter Controlled HE diode C Features: Very low V 1.5V (typ.) CE(sat) Maximum Junction Temperature 175C G E Short circuit withstand time 5s Designed for : - Frequency Converters - Uninterruptible Power Supply TRENCHSTOP and Fieldstop technology for 600V applications offers : - very tight parameter distribution - high ruggedness, temperature stable behavior PG-TO247-3 - very high switching speed - low V CE(sat) Positive temperature coefficient in V CE(sat) Low EMI Low Gate Charge Very soft, fast recovery anti-parallel Emitter Controlled HE diode 1 Qualified according to JEDEC for target applications Pb-free lead plating RoHS compliant Complete product spectrum and PSpice Models : IKW30N60T TRENCHSTOP Series q Thermal Resistance Parameter Symbol Conditions Max. Value Unit Characteristic 0.80 IGBT thermal resistance, R K/W t h J C junction case 1.05 Diode thermal resistance, R t h J C D junction case Thermal resistance, R 40 t h J A junction ambient Electrical Characteristic, at T = 25 C, unless otherwise specified j Value Parameter Symbol Conditions Unit min. typ. max. Static Characteristic Collector-emitter breakdown voltage V V =0V, I =0.2mA 600 - - V ( B R ) C E S GE C Collector-emitter saturation voltage V V = 15V, I =30A C E ( s a t ) GE C - 1.5 2.05 T =25 C j - 1.9 - T =175 C j Diode forward voltage V V =0V, I =30A F GE F T =25 C - 1.65 2.05 j - 1.6 - T =175 C j Gate-emitter threshold voltage V I =0.43mA, 4.1 4.9 5.7 G E ( t h) C V =V CE GE Zero gate voltage collector current I V =600V, A C E S CE V =0V GE T =25 C j - - 40 T =175 C j - - 2000 Gate-emitter leakage current I V =0V,V =20V - - 100 nA G E S CE GE Transconductance g V =20V, I =30A - 16.7 - S fs CE C Integrated gate resistor R - G i n t Dynamic Characteristic Input capacitance C V =25V, - 1630 - pF i s s CE Output capacitance C V =0V, - 108 - GE o s s f=1MHz Reverse transfer capacitance C - 50 - r s s Gate charge Q V =480V, I =30A - 167 - nC G a t e CC C V =15V GE Internal emitter inductance L - 13 - nH E measured 5mm (0.197 in.) from case 1) Short circuit collector current I - 275 - A V =15V,t 5 s C ( S C ) GE SC V = 400V, C C T = 150 C j 1) Allowed number of short circuits: <1000 time between short circuits: >1s. 2 Rev. 2.6 19.05.2015 IFAG IPC TD VLS