X-On Electronics has gained recognition as a prominent supplier of IKW40N120T2FKSA1 IGBT Transistors across the USA, India, Europe, Australia, and various other global locations. IKW40N120T2FKSA1 IGBT Transistors are a product manufactured by Infineon. We provide cost-effective solutions for IGBT Transistors, ensuring timely deliveries around the world.

IKW40N120T2FKSA1 Infineon

IKW40N120T2FKSA1 electronic component of Infineon
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Part No.IKW40N120T2FKSA1
Manufacturer: Infineon
Category: IGBT Transistors
Description: Infineon Technologies IGBT Transistors LOW LOSS DuoPack 1200V 40A
Datasheet: IKW40N120T2FKSA1 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 8.602 ea
Line Total: USD 8.6 
Availability - 456
Ship by Thu. 28 Nov to Mon. 02 Dec
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
456
Ship by Thu. 28 Nov to Mon. 02 Dec
MOQ : 1
Multiples : 1
1 : USD 8.602
10 : USD 8.525
25 : USD 5.577
100 : USD 5.148
240 : USD 5.148
480 : USD 4.939

2639
Ship by Mon. 02 Dec to Fri. 06 Dec
MOQ : 3
Multiples : 1
3 : USD 14.69
10 : USD 11.57
50 : USD 9.165
100 : USD 8.5962
200 : USD 7.4425
960 : USD 6.5325
1920 : USD 6.1425

246
Ship by Mon. 02 Dec to Fri. 06 Dec
MOQ : 2
Multiples : 1
2 : USD 8.5943
10 : USD 8.1475
25 : USD 6.1535
100 : USD 5.507
240 : USD 5.4514
480 : USD 5.3047

62
Ship by Mon. 02 Dec to Fri. 06 Dec
MOQ : 62
Multiples : 1
62 : USD 7.9625
100 : USD 7.6375
500 : USD 7.3125
1000 : USD 6.9062

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Configuration
Collector- Emitter Voltage VCEO Max
Collector-Emitter Saturation Voltage
Maximum Gate Emitter Voltage
Continuous Collector Current at 25 C
Gate-Emitter Leakage Current
Package / Case
Packaging
Technology
Mounting Style
Technology
Pd - Power Dissipation
Minimum Operating Temperature
Maximum Operating Temperature
Series
Brand
Cnhts
Hts Code
Mxhts
Product Type
Factory Pack Quantity :
Subcategory
Taric
Tradename
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the IKW40N120T2FKSA1 from our IGBT Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the IKW40N120T2FKSA1 and other electronic components in the IGBT Transistors category and beyond.

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IKW40N120T2 nd TRENCHSTOP 2 Generation Series nd Low Loss DuoPack : IGBT in 2 generation TRENCHSTOP with soft, fast recovery anti-parallel Emitter Controlled Diode C Best in class TO247 Short circuit withstand time 10 s Designed for : G E - Frequency Converters - Uninterrupted Power Supply nd TRENCHSTOP 2 generation for 1200 V applications offers : - very tight parameter distribution - high ruggedness, temperature stable behavior PG-TO-247-3 Easy paralleling capability due to positive temperature coefficient in V CE(sat) Low EMI Low Gate Charge Very soft, fast recovery anti-parallel Emitter Controlled HE Diode 1 Qualified according to JEDEC for target applications Pb-free lead plating RoHS compliant Complete product spectrum and PSpice Models : IKW40N120T2 nd TRENCHSTOP 2 Generation Series Thermal Resistance Parameter Symbol Conditions Max. Value Unit Characteristic IGBT thermal resistance, R 0.31 K/W t h J C junction case Diode thermal resistance, R 0.53 t h J C D junction case Thermal resistance, R 40 t h J A junction ambient Electrical Characteristic, at T = 25 C, unless otherwise specified j Value Parameter Symbol Conditions Unit min. typ. max. Static Characteristic Collector-emitter breakdown voltage V V =0V, I =500A 1200 - - V ( B R ) C E S GE C Collector-emitter saturation voltage V V = 15V, I =40A C E ( s a t ) GE C - 1.75 2.2 T =25 C j - 2.25 - T =150 C j - 2.3 - T =175 C j Diode forward voltage V V =0V, I =40A F GE F T =25 C - 1.75 2.2 j - 1.80 - T =150 C j - 1.80 - T =175 C j Gate-emitter threshold voltage V I =1.5mA,V =V 5.2 5.8 6.4 G E ( t h ) C CE GE Zero gate voltage collector current I V =1200V , mA C E S CE V =0V GE T =25 C j - - 0.4 T =150 C j - - 4.0 T =175 C j - - 20 Gate-emitter leakage current I V =0V,V =20V - - 200 nA G E S CE GE Transconductance g V =20V, I =40A - 21 - S fs CE C 2 Rev. 2.4 23.09.2014 IFAG IPC TD VLS

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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