IKW75N60T TRENCHSTOP Series q Low Loss DuoPack : IGBT in TRENCHSTOP and Fieldstop technology with soft, fast recovery anti-parallel Emitter Controlled HE diode C Very low VCE(sat) 1.5V (typ.) Maximum Junction Temperature 175C Short circuit withstand time 5 s G Positive temperature coefficient in V CE(sat) E very tight parameter distribution high ruggedness, temperature stable behaviour very high switching speed Low EMI Very soft, fast recovery anti-parallel Emitter Controlled HE diode 1) Qualified according to JEDEC for target applications PG-TO247-3 Pb-free lead plating RoHS compliant Complete product spectrum and PSpice Models : IKW75N60T TRENCHSTOP Series q Thermal Resistance Parameter Symbol Conditions Max. Value Unit Characteristic IGBT thermal resistance, R 0.35 K/W t h J C junction case Diode thermal resistance, R 0.6 t h J C D junction case Thermal resistance, R 40 t h J A junction ambient Electrical Characteristic, at T = 25 C, unless otherwise specified j Value Parameter Symbol Conditions Unit min. Typ. max. Static Characteristic V V =0V, I =0.2mA Collector-emitter breakdown voltage 600 - - V ( B R ) C E S G E C V V = 15V, I =75A Collector-emitter saturation voltage C E ( s a t ) G E C - 1.5 2.0 T =25 C j - 1.9 - T =175 C j Diode forward voltage V V =0V, I =75A F G E F T =25 C - 1.65 2.0 j - 1.6 - T =175 C j V I =1.2mA,V =V Gate-emitter threshold voltage 4.1 4.9 5.7 G E ( t h) C C E G E I V =600V, Zero gate voltage collector current A C E S C E V =0V G E T =25 C j - - 40 T =175 C j - - 5000 Gate-emitter leakage current I V =0V,V =20V - - 100 nA G E S C E G E Transconductance g V =20V, I =75A - 41 - S f s C E C Integrated gate resistor R - G i n t Dynamic Characteristic C V =25V, Input capacitance - - pF i s s C E 4620 Output capacitance C V =0V, - - G E o s s 288 f=1MHz C Reverse transfer capacitance - - r s s 137 Q V =480V, I =75A Gate charge - 470 - nC G a t e C C C V =15V G E Internal emitter inductance L - 13 - nH E measured 5mm (0.197 in.) from case I Short circuit collector current V =15V,t 5 s - 690 - A C ( S C ) G E S C V = 400V, Allowed number of short circuits: <1000 time C C between short circuits: >1s. T 150 C j 2 Rev. 2.8 2013-12-05 IFAG IPC TD VLS