X-On Electronics has gained recognition as a prominent supplier of IKW75N60TFKSA1 IGBT Transistors across the USA, India, Europe, Australia, and various other global locations. IKW75N60TFKSA1 IGBT Transistors are a product manufactured by Infineon. We provide cost-effective solutions for IGBT Transistors, ensuring timely deliveries around the world.

IKW75N60TFKSA1 Infineon

IKW75N60TFKSA1 electronic component of Infineon
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Part No.IKW75N60TFKSA1
Manufacturer: Infineon
Category: IGBT Transistors
Description: Transistor: IGBT; 600V; 75A; 428W; TO247-3
Datasheet: IKW75N60TFKSA1 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 7.6475 ea
Line Total: USD 7.65 
Availability - 478
Ship by Wed. 20 Nov to Fri. 22 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
9
Ship by Thu. 21 Nov to Tue. 26 Nov
MOQ : 1
Multiples : 1
1 : USD 5.6334

478
Ship by Wed. 20 Nov to Fri. 22 Nov
MOQ : 1
Multiples : 1
1 : USD 7.6475
10 : USD 7.199
25 : USD 5.244
100 : USD 4.876
240 : USD 4.8645
480 : USD 4.7265

13
Ship by Thu. 14 Nov to Wed. 20 Nov
MOQ : 4
Multiples : 1
4 : USD 11.0825
10 : USD 11.0012

484
Ship by Thu. 14 Nov to Wed. 20 Nov
MOQ : 4
Multiples : 1
4 : USD 10.9687
10 : USD 10.27
50 : USD 7.8
100 : USD 7.3125
200 : USD 6.89

601
Ship by Thu. 14 Nov to Wed. 20 Nov
MOQ : 2
Multiples : 1
2 : USD 9.6401
10 : USD 8.9931
25 : USD 6.5168
100 : USD 5.4638
240 : USD 5.3945
480 : USD 5.3413
1200 : USD 5.2867

   
Manufacturer
Product Category
Power Dissipation
Case
Mounting
Kind Of Package
Type Of Transistor
Collector-Emitter Voltage
Collector Current
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We are delighted to provide the IKW75N60TFKSA1 from our IGBT Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the IKW75N60TFKSA1 and other electronic components in the IGBT Transistors category and beyond.

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IKW75N60T TRENCHSTOP Series q Low Loss DuoPack : IGBT in TRENCHSTOP and Fieldstop technology with soft, fast recovery anti-parallel Emitter Controlled HE diode C Very low VCE(sat) 1.5V (typ.) Maximum Junction Temperature 175C Short circuit withstand time 5 s G Positive temperature coefficient in V CE(sat) E very tight parameter distribution high ruggedness, temperature stable behaviour very high switching speed Low EMI Very soft, fast recovery anti-parallel Emitter Controlled HE diode 1) Qualified according to JEDEC for target applications PG-TO247-3 Pb-free lead plating RoHS compliant Complete product spectrum and PSpice Models : IKW75N60T TRENCHSTOP Series q Thermal Resistance Parameter Symbol Conditions Max. Value Unit Characteristic IGBT thermal resistance, R 0.35 K/W t h J C junction case Diode thermal resistance, R 0.6 t h J C D junction case Thermal resistance, R 40 t h J A junction ambient Electrical Characteristic, at T = 25 C, unless otherwise specified j Value Parameter Symbol Conditions Unit min. Typ. max. Static Characteristic V V =0V, I =0.2mA Collector-emitter breakdown voltage 600 - - V ( B R ) C E S G E C V V = 15V, I =75A Collector-emitter saturation voltage C E ( s a t ) G E C - 1.5 2.0 T =25 C j - 1.9 - T =175 C j Diode forward voltage V V =0V, I =75A F G E F T =25 C - 1.65 2.0 j - 1.6 - T =175 C j V I =1.2mA,V =V Gate-emitter threshold voltage 4.1 4.9 5.7 G E ( t h) C C E G E I V =600V, Zero gate voltage collector current A C E S C E V =0V G E T =25 C j - - 40 T =175 C j - - 5000 Gate-emitter leakage current I V =0V,V =20V - - 100 nA G E S C E G E Transconductance g V =20V, I =75A - 41 - S f s C E C Integrated gate resistor R - G i n t Dynamic Characteristic C V =25V, Input capacitance - - pF i s s C E 4620 Output capacitance C V =0V, - - G E o s s 288 f=1MHz C Reverse transfer capacitance - - r s s 137 Q V =480V, I =75A Gate charge - 470 - nC G a t e C C C V =15V G E Internal emitter inductance L - 13 - nH E measured 5mm (0.197 in.) from case I Short circuit collector current V =15V,t 5 s - 690 - A C ( S C ) G E S C V = 400V, Allowed number of short circuits: <1000 time C C between short circuits: >1s. T 150 C j 2 Rev. 2.8 2013-12-05 IFAG IPC TD VLS

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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