X-On Electronics has gained recognition as a prominent supplier of IMBG120R090M1HXTMA1 IGBT Transistors across the USA, India, Europe, Australia, and various other global locations. IMBG120R090M1HXTMA1 IGBT Transistors are a product manufactured by Infineon. We provide cost-effective solutions for IGBT Transistors, ensuring timely deliveries around the world.

IMBG120R090M1HXTMA1 Infineon

IMBG120R090M1HXTMA1 electronic component of Infineon
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See Product Specifications
Part No.IMBG120R090M1HXTMA1
Manufacturer: Infineon
Category: IGBT Transistors
Description: N-Channel 1.2kV 26A (Tc) 136W (Tc) Surface Mount PG-TO263-7-12
Datasheet: IMBG120R090M1HXTMA1 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 8.5675 ea
Line Total: USD 8.57

Availability - 1284
Ship by Mon. 29 Jul to Wed. 31 Jul
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
4
Ship by Tue. 30 Jul to Fri. 02 Aug
MOQ : 1
Multiples : 1
1 : USD 15.9632
10 : USD 15.4526

1284
Ship by Mon. 29 Jul to Wed. 31 Jul
MOQ : 1
Multiples : 1
1 : USD 8.5675
10 : USD 7.4635
25 : USD 6.8425
100 : USD 6.4975
1000 : USD 5.6695
2000 : USD 5.2555
5000 : USD 5.1405

   
Manufacturer
Product Category
Package / Case
Packaging
Technology
Technology
Series
Part Status
Fet Type
Drain To Source Voltage Vdss
Current - Continuous Drain Id 25 C
Rds On Max Id Vgs
Vgsth Max Id
Gate Charge Qg Max Vgs
Vgs Max
Input Capacitance Ciss Max Vds
Fet Feature
Power Dissipation Max
Operating Temperature
Mounting Type
Supplier Device Package
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the IMBG120R090M1HXTMA1 from our IGBT Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the IMBG120R090M1HXTMA1 and other electronic components in the IGBT Transistors category and beyond.

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IMBG120R090M1H IMBG120R090M1H CoolSiC 1200V SiC Trench MOSFET with .XT interconnection technology Features Very low switching losses Drain Short circuit withstand time 3 s TAB Fully controllable dV/dt Gate pin 1 Benchmark gate threshold voltage, V = 4.5V GS(th) Robust against parasitic turn on, 0V turn-off gate voltage can be applied Sense Source pin 2 pin 3...7 Robust body diode for hard commutation .XT interconnection technology for best-in-class thermal performance Package creepage and clearance distance > 6.1mm Sense pin for optimized switching performance Benefits Efficiency improvement Enabling higher frequency Increased power density Cooling effort reduction Reduction of system complexity and cost Potential applications Drives Infrastructure Charger Energy generation - Solar string inverter and solar optimizer Industrial power supplies - Industrial UPS Product validation Qualified for industrial applications according to the relevant tests of JEDEC 47/20/22 Note: the source and sense pins are not exchangeable, their exchange might lead to malfunction Table 1 Key Performance and Package Parameters Type V I R T Marking Package DS D DS(on vj,max TC = 25C, Rth(j-c,max) Tvj = 25C, ID = 8.5A, VGS = 18V IMBG120R090M1H 1200V 26A 90m 175C 12M1H090 PG-TO263-7 Final Datasheet Please read the Important Notice and Warnings at the end of this document 2.2 www.infineon.com page 1 of 17 2020-12-11 IMBG120R090M1H CoolSiC 1200V SiC Trench MOSFET Ta ble of contents 1200V SiC Trench MOSFET Table of contents Features ........................................................................................................................................ 1 Benefits ......................................................................................................................................... 1 Potential applications ..................................................................................................................... 1 Product validation .......................................................................................................................... 1 Table of contents ............................................................................................................................ 2 1 Maximum ratings ................................................................................................................... 3 2 Thermal resistances ............................................................................................................... 4 3 Electrical Characteristics ........................................................................................................ 5 3.1 Static characteristics ............................................................................................................................... 5 3.2 Dynamic characteristics .......................................................................................................................... 6 3.3 Switching characteristics ........................................................................................................................ 7 4 Electrical characteristic diagrams ............................................................................................ 8 5 Package drawing ................................................................................................................... 14 6 Test conditions ..................................................................................................................... 15 Revision history............................................................................................................................. 16 Final Datasheet 2 of 17 2.2 2020-12-11

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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