IMBG120R090M1HXTMA1 Infineon

IMBG120R090M1H IMBG120R090M1H CoolSiC 1200V SiC Trench MOSFET with .XT interconnection technology Features Very low switching losses Drain Short circuit withstand time 3 s TAB Fully controllable dV/dt Gate pin 1 Benchmark gate threshold voltage, V = 4.5V GS(th) Robust against parasitic turn on, 0V turn-off gate voltage can be applied Sense Source pin 2 pin 3...7 Robust body diode for hard commutation .XT interconnection technology for best-in-class thermal performance Package creepage and clearance distance > 6.1mm Sense pin for optimized switching performance Benefits Efficiency improvement Enabling higher frequency Increased power density Cooling effort reduction Reduction of system complexity and cost Potential applications Drives Infrastructure Charger Energy generation - Solar string inverter and solar optimizer Industrial power supplies - Industrial UPS Product validation Qualified for industrial applications according to the relevant tests of JEDEC 47/20/22 Note: the source and sense pins are not exchangeable, their exchange might lead to malfunction Table 1 Key Performance and Package Parameters Type V I R T Marking Package DS D DS(on vj,max TC = 25C, Rth(j-c,max) Tvj = 25C, ID = 8.5A, VGS = 18V IMBG120R090M1H 1200V 26A 90m 175C 12M1H090 PG-TO263-7 Final Datasheet Please read the Important Notice and Warnings at the end of this document 2.2 www.infineon.com page 1 of 17 2020-12-11 IMBG120R090M1H CoolSiC 1200V SiC Trench MOSFET Ta ble of contents 1200V SiC Trench MOSFET Table of contents Features ........................................................................................................................................ 1 Benefits ......................................................................................................................................... 1 Potential applications ..................................................................................................................... 1 Product validation .......................................................................................................................... 1 Table of contents ............................................................................................................................ 2 1 Maximum ratings ................................................................................................................... 3 2 Thermal resistances ............................................................................................................... 4 3 Electrical Characteristics ........................................................................................................ 5 3.1 Static characteristics ............................................................................................................................... 5 3.2 Dynamic characteristics .......................................................................................................................... 6 3.3 Switching characteristics ........................................................................................................................ 7 4 Electrical characteristic diagrams ............................................................................................ 8 5 Package drawing ................................................................................................................... 14 6 Test conditions ..................................................................................................................... 15 Revision history............................................................................................................................. 16 Final Datasheet 2 of 17 2.2 2020-12-11