X-On Electronics has gained recognition as a prominent supplier of IMBG120R350M1HXTMA1 SiC MOSFETs across the USA, India, Europe, Australia, and various other global locations. IMBG120R350M1HXTMA1 SiC MOSFETs are a product manufactured by Infineon. We provide cost-effective solutions for SiC MOSFETs, ensuring timely deliveries around the world.

IMBG120R350M1HXTMA1 Infineon

Name: IMBG120R350M1HXTMA1
Brand: Infineon
SKU: IMBG120R350M1HXTMA1_Infineon
Availability: InStock
Rating: 5 (11 reviews)

IMBG120R350M1HXTMA1 electronic component of Infineon

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See Product Specifications

Part No.	IMBG120R350M1HXTMA1
Manufacturer:	Infineon
Category:	SiC MOSFETs
Description:	N-Channel 1.2kV 4.7A (Tc) 65W (Tc) Surface Mount PG-TO263-7-12
Datasheet:	IMBG120R350M1HXTMA1 Datasheet (PDF)
	Large This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

1: USD 5.0295 ea
Line Total: USD 5.03

Availability - 1679
Ship by Wed. 09 Apr to Fri. 11 Apr

MOQ: 1 Multiples: 1
Pack Size: 1

IMBG120R350M1HXTMA1 More Buying Options & Price Grid(s)

Availability Price Buy Price Quantity

1679

Ship by Wed. 09 Apr to Fri. 11 Apr

MOQ : 1
Multiples : 1

1 : USD 5.0295
10 : USD 3.4152
100 : USD 2.5535
500 : USD 2.2874
1000 : USD 2.1917

Specifications

Manufacturer

Infineon Infineon

Product Category

SiC MOSFETs SiC MOSFETs

Mounting Style

SMD/SMT SMD/SMT

Transistor Polarity

N - Channel N - Channel

Number of Channels

1 Channel 1 Channel

Vds - Drain-Source Breakdown Voltage

1.2 kV 1.2 kV

Id - Continuous Drain Current

4.7 A 4.7 A

Rds On - Drain-Source Resistance

468 mOhms 468 mOhms

Vgs - Gate-Source Voltage

- 7 V , + 23 V - 7 V , + 23 V

Vgs th - Gate-Source Threshold Voltage

5.7 V 5.7 V

Qg - Gate Charge

5.9 nC 5.9 nC

Minimum Operating Temperature

- 55 C - 55 C

Maximum Operating Temperature

+ 175 C + 175 C

Pd - Power Dissipation

65 W 65 W

Channel Mode

Enhancement Enhancement

Tradename

CoolSiC CoolSiC

Package / Case

TO - 263 - 7 TO - 263 - 7

Hts Code

8541290095 8541290095

Notes:- Show Stocked Products With Similar Attributes.

IMBG120R350M1HXTMA1 Alternative Parts

We are delighted to provide the IMBG120R350M1HXTMA1 from our SiC MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the IMBG120R350M1HXTMA1 and other electronic components in the SiC MOSFETs category and beyond.

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HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

CYP may also be referenced as

Cypress
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CYPRESS SEMI
Cypress Semicon
Cypress Semiconductor
Cypress Semiconductor Corp
INF
INFINEON
Infineon IR
INFINEON (CYPRESS)
Infineon (IRF)
Infineon / Cypress
Infineon / IR
INFINEON TECH ICs
Infineon Technologies
INFINEON TECHNOLOGIES AG
Infineon Technologies Americas Corp.
Infinite Power Solutions
INTERNATIONAL RECTIF
INTERNATIONAL RECTIFIER
International Rectifier HiRel Products
INTL RECTIFIER
IR
IRH
Ramtron
Ramtron / Cypress Semiconductor
Ramtron International Corp
SP9
SPANSION

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Availability	Price	Buy Price	Quantity
1679 Ship by Wed. 09 Apr to Fri. 11 Apr MOQ : 1 Multiples : 1	1 : USD 5.0295 10 : USD 3.4152 100 : USD 2.5535 500 : USD 2.2874 1000 : USD 2.1917

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