IR2101STRPBF Infineon

Data Sheet No. PD60043 Rev.O ( ) ( ) & (PbF) IR2101 S /IR2102 S HIGH AND LOW SIDE DRIVER Features Product Summary Floating channel designed for bootstrap operation V 600V max. OFFSET Fully operational to +600V Tolerant to negative transient voltage I +/- 130 mA / 270 mA O dV/dt immune Gate drive supply range from 10 to 20V V 10 - 20V OUT Undervoltage lockout 3.3V, 5V, and 15V logic input compatible t (typ.) 160 & 150 ns on/off Matched propagation delay for both channels Outputs in phase with inputs (IR2101) or out of Delay Matching 50 ns phase with inputs (IR2102) Also available LEAD-FREE Packages Description The IR2101(S)/IR2102(S) are high voltage, high speed power MOSFET and IGBT drivers with independent high and low side referenced output channels. Pro- 8-Lead SOIC prietary HVIC and latch immune CMOS technologies 8-Lead PDIP IR2101S/IR2102S IR2101/IR2102 enable ruggedized monolithic construction. The logic input is compatible with standard CMOS or LSTTL output, down to 3.3V logic. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high side configuration which operates up to 600 volts. Typical Connection up to 600V V CC V V CC B HIN HIN HO LIN TO LIN V S LOAD COM LO IR2101 up to 600V V CC V V CC B HIN HIN HO TO LIN LIN V (Refer to Lead Assignments for correct pin S LOAD configuration). This/These diagram(s) show COM LO electrical connections only. Please refer to our Application Notes and DesignTips for IR2102 proper circuit board layout. www.irf.com 1( ) ( ) & (PbF) S S IR2101 /IR2102 Absolute Maximum Ratings Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage param- eters are absolute voltages referenced to COM. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Symbol Definition Min. Max. Units V High side floating supply voltage -0.3 625 B V High side floating supply offset voltage V - 25 V + 0.3 S B B V High side floating output voltage V - 0.3 V + 0.3 HO S B V V Low side and logic fixed supply voltage -0.3 25 CC V Low side output voltage -0.3 V + 0.3 LO CC V Logic input voltage (HIN & LIN) -0.3 V + 0.3 IN CC dV /dt Allowable offset supply voltage transient 50 V/ns S P Package power dissipation T +25C (8 lead PDIP) 1.0 D A W (8 lead SOIC) 0.625 Rth Thermal resistance, junction to ambient (8 lead PDIP) 125 JA C/W (8 lead SOIC) 200 T Junction temperature 150 J C T Storage temperature -55 150 S T Lead temperature (soldering, 10 seconds) 300 L Recommended Operating Conditions The input/output logic timing diagram is shown in figure 1. For proper operation the device should be used within the recommended conditions. The V offset rating is tested with all supplies biased at 15V differential. S Symbol Definition Min. Max. Units V High side floating supply absolute voltage V + 10 V + 20 B S S V High side floating supply offset voltage Note 1 600 S V High side floating output voltage V V HO S B V V Low side and logic fixed supply voltage 10 20 CC V Low side output voltage 0 V LO CC V Logic input voltage (HIN & LIN) (IR2101) & (HIN & LIN) (IR2102) 0 V IN CC T Ambient temperature -40 125 C A Note 1: Logic operational for V of -5 to +600V. Logic state held for V of -5V to -V . (Please refer to the Design Tip S S BS DT97-3 for more details). 2 www.irf.com