IRFR6215PbF IRFU6215PbF HEXFET Power MOSFET P-Channel 175C Operating Temperature V -150V DSS Surface Mount (IRFR6215) Straight Lead (IRFU6215) R 0.295 DS(on) Advanced Process Technology Fast Switching I -13A D Fully Avalanche Rated Lead-Free D D Description Fifth Generation HEXFETs from International Rectifier utilize advanced S S processing techniques to achieve the lowest possible on-resistance per D G G silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are I- Pak D- Pak well known for, provides the designer with an extremely efficient device IRFR6215PbF IRFU6215PbF for use in a wide variety of applications. The D-PAK is designed for surface mounting using vapor phase, G D S infrared, or wave soldering techniques. The straight lead version Gate Drain Source (IRFU series) is for through-hole mounting applications. Power dissipation levels up to 1.5 watts are possible in typical surface mount applications. Standard Pack Base part number Package Type Orderable Part Number Form Quantity IRFU6215PbF Tube 75 IRFU6215PbF I-Pak Tube 75 IRFR6215PbF IRFR6215PbF D-Pak Tape and Reel Left 3000 IRFR6215TRLPbF Absolute Maximum Ratings Symbol Parameter Max. Units I T = 25C Continuous Drain Current, V -10V -13 D C GS I T = 100C Continuous Drain Current, V -10V -9.0 A D C GS I Pulsed Drain Current -44 DM P T = 25C Maximum Power Dissipation 110 W D C Linear Derating Factor 0.71 W/C V Gate-to-Source Voltage 20 V GS E Single Pulse Avalanche Energy 310 mJ AS I Avalanche Current -6.6 A AR E Repetitive Avalanche Energy 11 mJ AR dv/dt Peak Diode Recovery dv/dt 5.0 V/ns T Operating Junction and -55 to + 175 J T Storage Temperature Range C STG Soldering Temperature, for 10 seconds (1.6mm from case) 300 Thermal Resistance Symbol Parameter Typ. Max. Units R Junction-to-Case 1.4 JC R Junction-to-Ambient ( PCB Mount) 50 C/W JA Junction-to-Ambient 110 R JA 1 2016-5-31 IRFR/U6215PbF Electrical Characteristics T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions V Drain-to-Source Breakdown Voltage -150 V V = 0V, I = -250A (BR)DSS GS D Breakdown Voltage Temp. Coefficient -0.20 V/C Reference to 25C, I = -1mA V / T (BR)DSS J D 0.295 V = -10V, I = -6.6A GS D R Static Drain-to-Source On-Resistance DS(on) 0.58 V = -10V, I = -6.6A T =150C GS D J V Gate Threshold Voltage -2.0 -4.0 V V = V , I = -250A GS(th) DS GS D gfs Forward Trans conductance 3.6 S V = -50V, I = -6.6A DS D -25 V = -150V, V = 0V DS GS I Drain-to-Source Leakage Current A DSS -250 V = -120V,V = 0V,T =150C DS GS J Gate-to-Source Forward Leakage -100 V = -20V GS I nA GSS Gate-to-Source Reverse Leakage 100 V = 20V GS Q Total Gate Charge 66 I = -6.6A g D Q Gate-to-Source Charge 8.1 nC V = -120V gs DS Q Gate-to-Drain Charge 35 V = -10V, See Fig. 6 and 13 gd GS t Turn-On Delay Time 14 V = -75V d(on) DD t Rise Time 36 I = -6.6A r D ns t Turn-Off Delay Time 53 R = 6.8 d(off) G t Fall Time 37 R = 12 See Fig. 10 f D Between lead L Internal Drain Inductance 4.5 D ,6mm (0.25in.) nH from package L Internal Source Inductance 7.5 S and center of die contact C Input Capacitance 860 V = 0V iss GS C Output Capacitance 220 pF V = -25V oss DS C Reverse Transfer Capacitance 130 = 1.0MHz,See Fig. 5 rss Source-Drain Ratings and Characteristics Parameter Min. Typ. Max. Units Conditions Continuous Source Current MOSFET symbol I -13 S (Body Diode) showing the A Pulsed Source Current integral reverse I -44 SM (Body Diode) p-n junction diode. V Diode Forward Voltage -1.6 V T = 25C,I = -6.6A,V = 0V SD J S GS t Reverse Recovery Time 160 240 ns T = 25C ,I = -6.6A rr J F Q Reverse Recovery Charge 1.2 1.7 di/dt = 100A/s C rr t Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by L +L ) S D on Notes: Repetitive rating pulse width limited by max. junction temperature. (See Fig.11) starting T = 25C, L = 14mH, R = 25, I = -6.6A.(See Fig.12) J G AS I -6.6A, di/dt -620A/s, V V , T 175C SD DD (BR)DSS J Pulse width 300s duty cycle 2%. This is applied for I-PAK, LS of D-PAK is measured between lead and center of die contact. Uses IRF6215 data and test conditions. When mounted on 1 square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to application note AN-994. 2 2016-5-31